FSB50325 Fairchild Semiconductor, FSB50325 Datasheet

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FSB50325

Manufacturer Part Number
FSB50325
Description
MODULE SPM 250V 3A SPM23-AA
Manufacturer
Fairchild Semiconductor
Series
SPM™r
Type
FETr
Datasheet

Specifications of FSB50325

Configuration
3 Phase
Current
1.5A
Voltage
250V
Voltage - Isolation
1500Vrms
Package / Case
SPM23AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FSB50325
Manufacturer:
FSC
Quantity:
500
Part Number:
FSB50325A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FSB50325AT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FSB50325 Rev. C
FSB50325
Smart Power Module (SPM
Features
• 250V 3.0A 3-phase FRFET inverter including high voltage
• 3 divided negative dc-link terminals for inverter current sens-
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
Absolute Maximum Ratings
Symbol
integrated circuit (HVIC)
ing applications
T
R
V
V
V
I
I
V
I
V
D25
D80
P
T
STG
DP
θJC
ISO
CC
PN
BS
IN
D
J
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
Junction to Case Thermal Resistance
Isolation Voltage
Parameter
®
)
T
T
T
T
Applied between V
Applied between V
Applied between IN and COM
Each FRFET under inverter operat-
ing condition (Note 1)
60Hz, Sinusoidal, 1 minute, Con-
nection pins to heatsink
C
C
C
C
= 25°C
= 80°C
= 25°C, PW < 100μs
= 80°C, Each FRFET
1
General Description
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50325
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50325 is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
FSB50325 is a tiny smart power module (SPM
Conditions
CC
B
and V
and COM
S
-0.3 ~ VCC+0.3
-20 ~ 150
-50 ~ 150
Rating
1500
10.2
250
1.5
1.0
3.0
4.5
20
20
www.fairchildsemi.com
®
Units
) based on
April 2007
°C/W
V
°C
°C
W
V
A
A
A
V
V
V
rms

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FSB50325 Summary of contents

Page 1

... The package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB50325 is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. ...

Page 2

... W Note: Source terminal of each MOSFET is not connected to supply ground or bias voltage ground inside SPM Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) FSB50325 Rev. C Pin Description IC Common Supply Ground Bias Voltage for U Phase High Side FRFET Driving Bias Voltage for U Phase IC and Low Side FRFET Driving ...

Page 3

... The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir- cuit that is same as the switching test circuit. Package Marking & Ordering Information Device Marking Device FSB50325 FSB50325 FSB50325 Rev 25° =15V Unless Otherwise Specified ...

Page 4

... C should have good high-frequency characteristics to absorb high-frequency ripple current. 3 Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters 3.80 mm Note: Attach the thermocouple on top of the heatsink-side of SPM FSB50325 Rev. C Conditions Applied between P and N Applied between V and COM CC Applied between V and V ...

Page 5

... V IN 100 (a) Turn- Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low-side Supply, V MOSFET Current Input Signal UV Protection Status High-side Supply, V MOSFET Current FSB50325 Rev 120 Figure 4. Switching Time Definition R EH VCC VB HIN HO LIN VS COM LO C One-leg Diagram of SPM ...

Page 6

... 15-V Supply FSB50325 Rev (1) COM (2) V B(U) (3) V CC(U) VCC VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS C COM LO 1 (6) V S(U) (7) V B(V) (8) V CC(V) VCC VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS C COM LO 1 (11) V S(V) (12) V B(W) (13) V CC(W) ...

Page 7

... Detailed Package Outline Drawings (1.165) 13.34 #1 #17 12.23 2x3.90=7.80 ±0.30 (2.275) FSB50325 Rev. C MAX1.00 MAX1.00 0.60 0.60 ±0.10 ±0.10 (0.30) (0.30) 15*1.778=26.67 ±0.30 ±0.30 #16 #23 13.13 ±0.30 ±0.30 29.00 ±0.20 4x3.90=15.60 ±0.30 1.95 ±0.30 (0.30) 0.60 ±0.10 MAX1.00 7 (1.80) (1.80) (1.00) (1 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CorePLUS™ ...

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