FPAB30BH60B Fairchild Semiconductor, FPAB30BH60B Datasheet - Page 7

• Manufacturer Part Number: FPAB30BH60B
• Description: MOD SPM 600V 30A SPM27-IC
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FPAB30BH60B

• Configuration: 1 Phase
• Current: 30A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27IC
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 250 uA
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
Time Charts of SPMs Protective Function
P1 : Normal operation - IGBT ON and conducting current
P2 : Under voltage detection
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under voltage reset
P6 : Normal operation - IGBT ON and conducting current
P1 : Normal operation - IGBT ON and conducting current
P2 : Over current detection
P3 : IGBT gate interrupt / Fault signal generation
P4 : IGBT is slowly turned off
P5 : IGBT OFF signal
P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation
P7 : IGBT OFF state
P8 : Fault Output reset and normal operation start
G a te - E m itte r V o lta g e
C o n tr o l S u p p ly V o lta g e
F a u lt O u tp u t S ig n a l
G a te -E m itte r V o lta g e
In te r n a l IG B T
F a u lt O u tp u t S ig n a l
S e n s in g V o l ta g e
In te r n a l IG B T
O u tp u t C u r re n t
O u tp u t C u rr e n t
In p u t S ig n a l
In p u t S ig n a l
Fig. 6. Under-Voltage Protection
Fig. 7. Over Current Protection
O C D e t e c t io n
R C F ilt e r D e la y
P 1
P 2
P 1
d e te c t
U V
P 3
P 4
P 5
V o lt a g e ( 0 . 5 V )
O C R e f e r e n c e
P 6
P 3
P 2
P 4
P 7
P 5
P 8
P 6
r e s e t
U V