FPAB30BH60 Fairchild Semiconductor, FPAB30BH60 Datasheet - Page 5

• Manufacturer Part Number: FPAB30BH60
• Description: MODULE SPM FOR FRONT END SPM27-I
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FPAB30BH60

• Configuration: 1 Phase
• Current: 25A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27IA
• Input Voltage: 264V
• Power Dissipation Pd: 169W
• No. Of Pins: 27
• Termination Type: Through Hole
• Output Current Max: 30A
• Input Voltage Primary Max: 264V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Filter Terminals: Through Hole
• Frequency: 20kHz
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
Electrical Characteristics
Converter Part
Note
3. t
Control Part
Note
4. The fault-out pulse width t
IGBT saturation voltage
FRD forward voltage
Rectifier forward voltage
Peak surge current
Switching Times
Collector - emitter
Leakage Current
Quiescent V
rent
Fault Output Voltage
Over Current Trip Level
Supply Circuit Under-
Voltage Protection
Fault-out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
internally. For the detailed information, please see Fig. 4
ON
and t
OFF
Item
Item
include the propagation delay time of the internal drive IC. t
CC
Supply Cur-
FOD
depends on the capacitance value of C
Symbol
V
V
V
UV
UV
I
V
V
IN(OFF)
t
QCCL
SC(ref)
IN(ON)
R
Symbol
FOD
V
FOH
FOL
t
t
CCD
CCR
TH
C(OFF)
CE(sat)
C(ON)
I
t
I
V
V
t
FSM
OFF
CES
ON
t
I
FR
FF
rr
rr
V
V
V
V
Detection Level
Reset Level
C
Applied between IN - COM
@ T
@ T
(T
CC
SC
SC
CC
FOD
J
C
C
= 0V, V
= 1V, V
= 15V, IN = 0V V
= 15V
= 25°C, Unless Otherwise Specified)
V
I
I
Non-repetitive, 60Hz single half-sine wave
V
V
(Note 3)
V
F
F
= 33nF (Note 4)
= 25°C (Note Fig. 9)
= 100°C (Note Fig. 9)
CC
PN
IN
CE
= 30A
= 30A
= 0V ↔ 5V, Inductive Load
=15V, V
= 400V, V
= V
FO
FO
CES
FOD
Circuit: 4.7kΩ to 5V Pull-up
Circuit: 4.7kΩ to 5V Pull-up
C(ON)
according to the following approximate equation : C
IN
Condition
and t
CC
= 5V; I
Condition
= 15V, I
C(OFF)
CC
- COM
C
are the switching time of IGBT itself under the given gate driving condition
=30A
C
=30A
Min.
200
Min.
0.45
10.7
11.2
4.5
1.4
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FOD
Typ.
= 18.3 x 10
650
400
620
200
2.0
1.8
1.2
3.5
60
Typ.
12.4
2.99
11.9
-
-
0.5
1.8
50
-
-
-
-
-
Max.
-6
250
Max.
2.8
2.5
1.5
0.55
13.0
13.2
0.8
2.0
0.8
x t
26
-
-
-
-
-
-
-
-
-
-
-
FOD
[F]
Unit
Unit
μA
ns
ns
ns
ns
ns
mA
ms
kΩ
kΩ
V
V
V
A
A
V
V
V
V
V
V
V