FSBF10CH60BTL Fairchild Semiconductor, FSBF10CH60BTL Datasheet - Page 6

• Manufacturer Part Number: FSBF10CH60BTL
• Description: MODULE SPM 600V 10A 3PH SPM27-JB
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBF10CH60BTL

• Configuration: 3 Phase
• Current: 10A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27-JB
• Operating Temperature (max): 150C
• Operating Temperature (min): -40C
• Pin Count: 27
• Mounting: Through Hole
• Case Length: 44mm
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FSBF10CH60BTL Rev. C
Electrical Characteristics
Inverter Part
Note:
3. t
Control Part
Note:
4. Short-circuit current protection is functioning only at the low-sides.
5. The fault-out pulse width t
Symbol
HS
LS
V
For the detailed information, please see Figure 4.
V
UV
UV
V
UV
UV
ON
I
I
ΔTSD
Symbol
V
V
IN(OFF)
QCCL
QCCH
I
TSD
t
SC(ref)
IN(ON)
V
QBS
FOD
FOH
FOL
and t
CCD
CCR
CE(SAT)
BSD
BSR
I
CES
V
t
t
t
t
F
C(OFF)
C(OFF)
C(ON)
C(ON)
OFF
t
t
t
t
OFF
OFF
ON
ON
t
t
rr
rr
include the propagation delay time of the internal drive IC. t
Quiescent V
Current
Quiescent V
Current
Fault Output Voltage
Short Circuit Trip Level
Over-temperature
tion
Over-temperature
tion hysterisis
Supply Circuit Under-
Voltage Protection
Fault-out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Collector-Emitter Saturation
Voltage
FWD Forward Voltage
Switching Times
Collector-Emitter
Leakage Current
Parameter
FOD
depends on the capacitance value of C
CC
BS
Parameter
Supply
Supply
protec-
protec-
(T
J
V
IN
V
IN
V
IN
V
V
V
Temperature at LVIC
Temperature at LVIC
Detection Level
Reset Level
Detection Level
Reset Level
C
Applied between IN
IN
= 25°C, Unless Otherwise Specified)
CC
CC
BS
SC
SC
CC
FOD
(UL, VL, WL)
(UH, VH, WH)
(UH, VH, WH)
(VL)
= 15V
= 0V, V
= 1V, V
= 15V
= 15V
= 15V (Note 4)
V
V
V
V
I
V
(Note 3)
V
I
V
(Note 3)
V
, IN
C
C
= 33nF (Note 5)
CC
IN
IN
PN
IN
PN
IN
CE
= 10A
= 10A
= 5V
= 0V
= 0V ↔ 5V, Inductive Load
= 0V ↔ 5V, Inductive Load
(WL)
= 300V, V
= 300V, V
= V
FOD
= V
FO
FO
C(ON)
CES
according to the following approximate equation : C
BS
= 0V
- COM
= 0V
= 0V
Circuit: 4.7kΩ to 5V Pull-up
Circuit: 4.7kΩ to 5V Pull-up
= 15V
Conditions
and t
CC
CC
Conditions
(UH)
C(OFF)
6
V
V
V
V
= V
= V
CC(L)
CC(H)
B(U)
B(W)
, IN
are the switching time of IGBT itself under the given gate driving condition internally.
BS
BS
- V
- V
(VH)
- COM
- COM
I
I
= 15V
= 15V
C
F
S(U)
S(W)
= 10A, T
= 10A, T
, IN
, V
(WH)
B(V)
, IN
J
J
-V
= 25°C
= 25°C
S(V)
(UL)
,
,
Min.
FOD
0.45
10.7
10.5
11.2
Min.
4.5
1.0
2.8
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= 18.3 x 10
Typ.
Typ.
0.75
0.15
0.50
0.15
0.10
0.50
0.25
0.50
0.15
0.10
11.9
12.4
11.5
160
0.5
1.8
11
-6
5
-
-
-
-
-
-
-
-
-
-
x t
FOD
[F]
Max.
Max.
0.55
13.0
13.4
12.5
2.2
2.6
600
500
0.8
0.8
23
12
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.fairchildsemi.com
Units
Units
mA
mA
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
ms
μA
μA
°C
°C
V
V
V
V
V
V
V
V
V
V
V