FSB50250S Fairchild Semiconductor, FSB50250S Datasheet

IC SMART POWER MOD 2A SPM23-BA

FSB50250S

Manufacturer Part Number
FSB50250S
Description
IC SMART POWER MOD 2A SPM23-BA
Manufacturer
Fairchild Semiconductor
Series
SPM™r
Type
FETr
Datasheet

Specifications of FSB50250S

Configuration
3 Phase
Current
1A
Voltage
500V
Voltage - Isolation
1500Vrms
Package / Case
SPM23BA
Mounting Style
SMD/SMT
Input Voltage
300 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 20 C
Supply Current
160 uA
Topology
Inverter
Output Current
2A
Power Dissipation Pd
10W
Supply Voltage Range
13.5V To 16.5V
No. Of Pins
23
Termination Type
SMD
Supply Voltage Min
13.5V
Input Voltage Primary Max
500V
Rohs Compliant
Yes
Filter Terminals
SMD
Frequency
15kHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FSB50250STR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FSB50250S
Manufacturer:
FSC
Quantity:
450
Part Number:
FSB50250S
Manufacturer:
Fairchild Semiconductor
Quantity:
1 800
©2007 Fairchild Semiconductor Corporation
FSB50250S Rev. B
FSB50250S
Smart Power Module (SPM
Features
• 500V 1.0A 3-phase FRFET inverter including high voltage
• 3 divided negative dc-link terminals for inverter current sens-
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level(MSL) 3
Absolute Maximum Ratings
Symbol
integrated circuit (HVIC)
ing applications
T
R
V
V
V
I
I
V
I
V
D25
D80
P
T
STG
DP
θJC
ISO
CC
PN
BS
IN
D
J
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
Junction to Case Thermal Resistance
Isolation Voltage
Parameter
®
)
T
T
T
T
Applied between V
Applied between V
Applied between IN and COM
Each FRFET under inverter operat-
ing condition (Note 1)
60Hz, Sinusoidal, 1 minute, Con-
nection pins to heatsink
C
C
C
C
= 25°C
= 80°C
= 25°C, PW < 100μs
= 25°C, For Each FRFET
1
General Description
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50250S
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50250S is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
FSB50250S is a tiny smart power module (SPM
Conditions
CC
B
and V
and COM
S
-0.3 ~ VCC+0.3
-20 ~ 150
-50 ~ 150
Rating
1500
500
1.0
0.7
2.0
9.3
10
20
20
www.fairchildsemi.com
®
Units
) based on
May 2007
May 2007
°C/W
V
°C
°C
W
V
A
A
A
V
V
V
rms

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FSB50250S Summary of contents

Page 1

... The package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB50250S is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. ...

Page 2

... Note: Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) FSB50250S Rev. B Pin Description IC Common Supply Ground Bias Voltage for U Phase High Side FRFET Driving ...

Page 3

... The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir- cuit that is same as the switching test circuit. Package Marking & Ordering Information Device Marking Device FSB50250S FSB50250S FSB50250S Rev 25° =15V Unless Otherwise Specified ...

Page 4

... Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters 3.80mm 3.80mm Note: Attach the thermocouple on top of the heatsink-side of SPM FSB50250S Rev. B Conditions Applied between P and N Applied between V and COM CC Applied between V and V ...

Page 5

... V IN 100 (a) Turn- Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low-side Supply, V MOSFET Current Input Signal UV Protection Status High-side Supply, V MOSFET Current FSB50250S Rev 120 Figure 4. Switching Time Definition R EH VCC VB HIN HO LIN VS COM LO C One-leg Diagram of SPM ...

Page 6

... 15-V Supply FSB50250S Rev (1) COM (2) V B(U) (3) V CC(U) VCC VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS C COM LO 1 (6) V S(U) (7) V B(V) (8) V CC(V) VCC VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS C COM LO 1 (11) V S(V) (12) V B(W) (13) V CC(W) ...

Page 7

... Detailed Package Outline Drawings (1.165) 15*1.778=26.67 13.34 ±0.30 #1 #17 12.23 ±0.30 2x3.90=7.80 (2.275) 0.60 ±0.10 Max 1.00 GAGE PLANE SEATING PLANE FSB50250S Rev. B Max 1.00 0.60 ±0.10 ±0.30 13.34 ±0.30 #1 #16 1.30 #23 13.13 ±0.30 7.80 29.00 ±0.20 LAND PATTERN RECOMMENDATIONS ±0.30 4x3.90=15.60 ± ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CorePLUS™ ...

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