FMS7G15US60 Fairchild Semiconductor, FMS7G15US60 Datasheet - Page 7

• Manufacturer Part Number: FMS7G15US60
• Description: IGBT 600V 15A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS7G15US60

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.935nF @ 30V
• Power - Max: 73W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

FMS7G15US60 Rev. B1
Typical Performance Characteristics
Figure 13. Switching Loss vs. Collector Current
Figure 15. SOA Characteristics
Figure 17. Forward Characteristics
1 0 0 0 0
1 0 0 0
1 0 0
50
40
30
20
10
0 . 0 1
1 0 0
0
0 . 1
1 0
0
1
5
0 . 1
Common Cathode
V
T
T
E o f f
E o n
E o f f
I
C
C
Common Emitter
V
T
T
I
C
GE
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
C
GE
C
C
= 25 ℃
= 125 ℃
MAX. (Continuous)
MAX. (Pulsed)
= 0V
= 25 ℃ ℃℃
= 125
= ± 15V, R
C o l l e c t o r - E m i t t e r
C
℃
1 0
= 25 ℃
------
1
C o l l e c t o r C u r r e n t , I c [ A ]
Forward Voltage, V
1
G
= 13 Ω
1 5
DC Operation
2
1 0
V o l t a g e , V
2 0
F
[V]
3
1 ms
1 0 0
C E
2 5
100us
[ V ]
50 us
1 0 0 0
4
3 0
(Continued)
7
Figure 14. Gate Charge Characteristics
Figure 16. RBSOA Characteristics
Figure 18. Reverse Recovery Characteristics
1 5
1 2
9
6
3
0
0.1
0
50
10
1
0.1
Common Emitter
R
T
20
10
C
L
1
0
= 20
= 25
Single Nonrepetitive
Pulse T
V
R
GE
G
= 13
Ω
o
= 15V
C
1 0
100
J
Ω
4
≤ 125 ℃
G a t e C h a r g e , Q
Collector-Emitter Voltage, V
200
Forward Current, I
2 0
V
300
C C
8
= 1 0 0 V
3 0
g
400
2 0 0 V
[ n C ]
F
3 0 0 V
500
Common Cathode
di/dt = 30A/ ㎲
T
T
[A]
4 0
C
C
CE
12
= 25 ℃
= 100
[V]
www.fairchildsemi.com
℃
600
---------
5 0
T
I
700
rr
rr
16