FMG1G100US60L Fairchild Semiconductor, FMG1G100US60L Datasheet - Page 42
FMG1G100US60L
Manufacturer Part Number
FMG1G100US60L
Description
IGBT MOLDING 600V 100A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG1G50US60H.pdf
(214 pages)
Specifications of FMG1G100US60L
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 100A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
10.84nF @ 30V
Power - Max
400W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG1G100US60L
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMG1G100US60L
Quantity:
55
- Current page: 42 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
TO-220
ISL9N302AP3
ISL9N303AP3
FDP8030L
FDP8870
FDP7045L
HUF76145P3
ISL9N304AP3
IFDP8874
FDP8896
FDP6676
ISL9N306AP3
FDP6670AL
FDP7030L
ISL9N307AP3
FDP7042L
HUF76139P3
ISL9N308AP3
FDP7030BL
ISL9N7030BLP3
ISL9N310AP3
FDP6035L
ISL9N312AP3
FDP6035AL
FDP6030L
HUF76129P3
FDP6030BL
HUF76121P3
HUF76107P3
FDP6676S
FDP6670S
FDP6644S
FDP6690S
HUF75229P3
BUZ11
HUF75345P3
HUFA75345P3
HUF75344P3
HUFA75344P3
TO-220 N-Channel
Products
Min. (V)
BV
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
50
50
55
55
55
55
DSS
Config.
SyncFET
SyncFET
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0025
0.0032
0.0035
0.0041
0.0045
0.0045
0.0045
0.0053
0.0059
0.0065
0.0075
0.0075
0.0112
0.0125
0.0065
0.0085
0.0155
0.006
0.006
0.007
0.007
0.008
0.009
0.009
0.012
0.013
0.016
0.018
0.021
0.052
0.022
0.007
0.007
0.008
0.008
10V
0.01
0.01
0.04
R
0.0033
0.0045
0.0046
0.0065
0.0075
0.0066
0.0075
0.0095
0.0085
0.0115
0.0105
4.5V
0.005
0.006
0.007
0.009
0.011
0.012
0.012
0.012
0.015
0.014
0.017
0.017
0.023
0.024
0.031
0.085
0.008
0.012
0.023
DS(ON)
0.01
0.02
–
–
–
–
–
–
Max (Ω) @ V
2-37
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
110
120
106
125
125
4.7
61
41
73
38
56
48
43
30
24
24
28
32
65
45
17
45
17
13
13
17
13
37
12
24
40
23
27
11
35
90
90
–
= 5V
I
D
156
100
114
75
75
80
75
75
92
84
75
80
80
75
50
75
75
60
75
62
48
58
48
48
56
40
47
20
76
62
55
42
44
30
75
75
75
75
(A)
MOSFETs
P
D
62.5
345
215
187
160
107
270
145
110
125
100
165
100
100
105
325
325
285
285
80
68
83
52
58
75
70
60
90
75
93
68
60
70
75
52
60
35
48
(W)
Related parts for FMG1G100US60L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: