FMG1G50US60H Fairchild Semiconductor, FMG1G50US60H Datasheet - Page 158
FMG1G50US60H
Manufacturer Part Number
FMG1G50US60H
Description
IGBT MOLDING 600V 50A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG1G50US60H.pdf
(214 pages)
Specifications of FMG1G50US60H
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 50A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.46nF @ 30V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG1G50US60H
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMG1G50US60H
Quantity:
55
- Current page: 158 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
SMBJ8V5A
SMBJ8V5CA
SMBJ9V0A
SMBJ9V0CA
SMBJ10A
SMBJ10CA
SMBJ11A
SMBJ11CA
SMBJ12A822
SMBJ12A933
SMBJ12A
SMBJ12CA
SMBJ13A
SMBJ13A100
SMBJ13CA
SMBJ14A
SMBJ14CA
SMBJ15A
SMBJ15CA
SMBJ16A
SMBJ16CA
SMBJ17A
SMBJ17CA
SMBJ18A
SMBJ18CA
SMBJ20A
SMBJ20CA
SMBJ22A
SMBJ22CA
SMBJ24A
SMBJ24CA
SMBJ26A
SMBJ26CA
SMBJ28A
SMBJ28CA
Products
Voltage (V)
Stand-off
Reverse
V
RWM
8.5
8.5
10
10
11
11
12
12
12
12
13
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
9
9
V
Min
9.44
9.44
11.1
11.1
12.2
12.2
13.2
13.2
13.3
13.3
14.4
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
10
10
20
20
BR
Voltage (V)
Breakdown
Max
10.4
10.4
11.1
11.1
12.8
12.8
13.5
13.5
14.3
13.8
14.7
14.7
15.9
15.9
15.9
17.2
17.2
18.5
18.5
19.7
19.7
20.9
20.9
22.1
22.1
24.5
24.5
26.9
26.9
29.5
29.5
31.9
31.9
34.4
34.4
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-153
14.4
14.4
15.4
15.4
18.2
18.2
15.6
15.6
19.9
19.9
21.5
21.5
21.5
23.2
23.2
24.4
24.4
27.6
27.6
29.2
29.2
32.4
32.4
35.5
35.5
38.9
38.9
42.1
42.1
45.4
45.4
V
17
26
17
26
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
41.7
41.7
35.3
35.3
17.5
17.5
30.2
30.2
27.9
27.9
27.9
25.9
25.9
24.6
24.6
23.1
23.1
21.7
21.7
20.5
20.5
18.5
18.5
16.9
16.9
15.4
15.4
14.3
14.3
13.2
13.2
PPM
39
39
33
33
Bold = New Products (introduced January 2003 or later)
Leakage @ V
I
R
Max Reverse
(µA)
20
40
10
20
5
5
5
5
5
5
5
5
5
0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
RWM
Diodes and Rectifiers
P
PPM
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FMG1G50US60H
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: