FMG1G50US60L Fairchild Semiconductor, FMG1G50US60L Datasheet - Page 177
FMG1G50US60L
Manufacturer Part Number
FMG1G50US60L
Description
IGBT MOLDING 600V 50A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMS6G10US60.pdf
(214 pages)
Specifications of FMG1G50US60L
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 50A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.46nF @ 30V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG1G50US60L
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMG1G50US60L
Quantity:
55
- Current page: 177 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Small Signal Diodes (Continued)
BAW56
MMBD1205
MMBD4148CA
BAS35
MMBD1405
MMBD1505A
MMBD1405A
MMBD1704A
BAV74
BAV70
MMBD2838
MMBD1204
MMBD4148CC
MMBD1404
MMBD1504A
MMBD1404A
MMBD1703
BAV99
MMBD1203
MMBD4148SE
MMBD7000
BAS31
MMBD1403
MMBD1503A
FLLD261
BAV23S
MMBD1403A
MMBD1701
BAS16
MMBD1201
MMBD4148
MMBD4448
MMBD914
BAS19
BAS29
BAS20
Products
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Configuration
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
100
100
125
200
200
250
100
100
200
200
250
100
100
100
125
200
200
200
250
250
100
100
100
100
120
120
200
(V)
85
30
50
70
75
30
70
30
85
RRM
I
0.15
0.15
0.15
F (AV)
(A)
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.4
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
2-172
I
0.25
0.25
0.25
(A)
FSM
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
3
9
1
1
1
1
1
1
2
2
2
Discrete Power Products –
V
FM
(V)
1.1
1.1
1.1
1.1
1.2
1.1
1.1
1.1
1.4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Max
(°C/W)
R
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
θJA
Diodes and Rectifiers
t
rr
(ns)
400
0.7
0.7
50
50
50
50
50
50
50
50
50
50
50
50
Max
–
–
–
6
4
4
1
4
6
4
4
4
6
4
4
4
6
4
4
4
4
I
RM
0.025
0.001
0.025
0.001
0.025
0.001
0.005
0.025
0.025
0.025
0.05
0.05
0.05
0.05
0.05
0.05
0.05
(µA)
2.5
0.1
0.1
0.1
0.1
0.1
0.1
2.5
0.3
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5
1
Max
Related parts for FMG1G50US60L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: