FMS6G15US60 Fairchild Semiconductor, FMS6G15US60 Datasheet - Page 114
FMS6G15US60
Manufacturer Part Number
FMS6G15US60
Description
IGBT 600V 15A 25PM-AA
Manufacturer
Fairchild Semiconductor
Specifications of FMS6G15US60
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 15A
Current - Collector (ic) (max)
15A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
0.935nF @ 30V
Power - Max
73W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
25PM-AA
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMS6G15US60
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMS6G15US60
Quantity:
55
Company:
Part Number:
FMS6G15US60S
Manufacturer:
VICOR
Quantity:
1 000
Part Number:
FMS6G15US60S
Quantity:
55
- Current page: 114 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Small Signal Transistors – General Purpose Transistors (Continued)
KSA643
SS9012
BC369
BC308
BC309
2N4126
KSA642
2N3702
2N6076
MPS6523
MPS3702
BC328
PN3638
PN3638A
KSB564A
MPS6562
SS8550
BC558
BC559
PN4917
2N4125
2N3703
PN5138
MPS3703
BC213L
BC214L
BC214LB
BC214LC
PN4250
PN4122
2N3905
2N3906
MPS6518
Products
V
CEO
20
20
20
25
25
25
25
25
25
25
25
25
25
25
25
25
25
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
(V)
V
CBO
40
40
25
30
30
25
30
40
25
45
40
30
25
25
30
25
40
30
30
30
30
50
30
50
45
45
45
45
40
40
40
40
–
(V)
V
EBO
5
5
5
5
5
4
5
5
5
4
5
5
4
4
5
5
6
5
5
5
4
5
5
5
5
5
5
5
5
5
5
5
4
(V)
Max (A)
500
500
500
500
0.5
0.5
1.5
0.1
0.1
0.2
0.3
0.5
0.5
0.5
0.8
0.8
0.8
0.8
1.5
0.1
0.1
0.2
0.2
0.5
0.5
0.8
0.2
0.2
0.2
0.2
I
–
1
1
C
Min
120
120
120
100
300
100
100
110
110
150
140
200
350
250
150
100
150
40
64
85
70
60
60
30
70
50
85
50
30
50
30
80
50
2-109
Discrete Power Products –
Max
400
202
375
800
800
360
400
300
500
600
300
630
400
200
300
800
800
300
150
150
800
150
400
400
400
600
700
300
150
300
300
–
–
h
FE
@V
10
10
10
10
CE
1
1
1
5
5
1
1
5
5
1
1
1
1
1
1
5
5
1
1
5
5
5
5
5
5
5
1
1
1
(V) @I
C
100
500
100
100
500
100
0.1
50
50
50
10
50
50
50
10
50
50
10
10
10
2
2
2
2
2
2
2
0
2
2
2
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.25
0.25
0.25
0.65
0.65
0.25
0.25
0.25
0.4
0.6
0.5
0.3
0.3
0.4
0.6
0.5
0.7
0.5
0.5
0.5
0.3
0.4
0.3
0.6
0.6
0.6
0.6
0.3
0.4
0.4
0.5
1
1
@I
V
CE (sat)
1000
1000
C
500
500
300
500
300
300
500
800
100
100
100
100
100
100
10
10
50
50
10
50
50
50
50
50
10
50
10
50
50
50
50
(mA) @I
B
100
100
0.5
0.5
0.5
50
50
30
50
30
30
50
80
10
10
10
10
5
5
1
5
5
5
5
5
5
5
5
1
5
5
5
5
(mA)
Related parts for FMS6G15US60
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: