FMG2G300LS60E Fairchild Semiconductor, FMG2G300LS60E Datasheet - Page 4

• Manufacturer Part Number: FMG2G300LS60E
• Description: IGBT POWER MOD 600V 300A 7PM-HA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G300LS60E

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 892W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-HA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -
• Other names: FMG2G300LS60E_NL; FMG2G300LS60E_NL

©2004 Fairchild Semiconductor Corporation
4 0 0
3 0 0
2 0 0
1 0 0
1 0 0 0
Fig 7. Switching Loss vs. Gate Resistance
Fig 9. Forward Characteristics (diode)
1 0 0
0
1 0
0 . 0
Common Cathode
V
T
T
Common Emitter
V
Ic = 300A
T
T
GE
C
C
C
C
CC
= 25 ℃
= 125 ℃
= 25 ℃ ℃℃
= 125
= 0V
= 300V, V
0 . 4
1 0
℃
F o r w a r d
------
G a t e R e s i s t a n c e , R
0 . 8
GE
= ± 15V
2 0
V o l t a g e ,
1 . 2
1 . 6
3 0
V
F
G
[ V ]
[
2 . 0
Ω
]
4 0
2 . 4
E o f f
E o n
2 . 8
5 0
Fig 10. Reverse Recovery Characteristics(diode)
Fig 8. Gate Charge Characteristics
1 5
1 2
9
6
3
0
0
2 0 0
1 0 0
Common Emitter
I
V
T
1 0
C
CC
C
5
= 300A
= 25
0
= 300V
Common Cathode
di/dt = 600A/ ㎲
T
T
C
C
= 25 ℃
= 100 ℃
2 0 0
o
C
5 0
G a t e C h a r g e , Q
F o r w a r d
4 0 0
1 0 0
6 0 0
1 5 0
C u r r e n t , I
g
[ n C ]
2 0 0
8 0 0
F
[ A ]
FMG2G300LS60E Rev. A
2 5 0
1 0 0 0
t
I
rr
rr
3 0 0