APT80GP60JDQ3 Microsemi Power Products Group, APT80GP60JDQ3 Datasheet - Page 8
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APT80GP60JDQ3
Manufacturer Part Number
APT80GP60JDQ3
Description
IGBT 600V 151A 462W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT80GP60JDQ3.pdf
(9 pages)
Specifications of APT80GP60JDQ3
Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 80A
Current - Collector (ic) (max)
151A
Current - Collector Cutoff (max)
1.25mA
Input Capacitance (cies) @ Vce
9.84nF @ 25V
Power - Max
462W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT80GP60JDQ3
APT80GP60JDQ3MI
APT80GP60JDQ3MI
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 30. Dynamic Parameters vs. Junction Temperature
2500
2000
1500
1000
200
180
160
140
120
100
500
600
500
400
300
200
100
Figure 32. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
Figure 26. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
V
t
J
F
rr
R
F
T
= 125°C
200 400 600 800 1000 1200 1400 1600
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
= 400V
J
, JUNCTION TEMPERATURE (°C)
25
0.5
I
V
RRM
T
R
J
, REVERSE VOLTAGE (V)
T
= 125°C
60A
J
50
= 175°C
1.0
30A
Q
10
rr
75
1.5
T
J
100
T
= 25°C
J
= -55°C
t
rr
2.0
Q
125
rr
120A
100 200
150
2.5
Figure 27. Reverse Recovery Time vs. Current Rate of Change
Figure 31. Maximum Average Forward Current vs. CaseTemperature
Figure 29. Reverse Recovery Current vs. Current Rate of Change
160
140
120
100
100
80
60
40
20
60
50
40
30
20
10
80
60
40
20
0
0
0
0
0
25
-di
-di
T
V
F
J
R
F
200 400 600 800 1000 1200 1400 1600
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
200 400 600 800 1000 1200 1400 1600
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
50
Case Temperature (°C)
75
120A
30A
100
120A
60A
125
60A
Duty cycle = 0.5
T
J
T
150
V
J
R
= 175°C
= 125°C
= 400V
30A
175