APT80GP60JDQ3 Microsemi Power Products Group, APT80GP60JDQ3 Datasheet - Page 8

• Manufacturer Part Number: APT80GP60JDQ3
• Description: IGBT 600V 151A 462W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT80GP60JDQ3

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 80A
• Current - Collector (ic) (max): 151A
• Current - Collector Cutoff (max): 1.25mA
• Input Capacitance (cies) @ Vce: 9.84nF @ 25V
• Power - Max: 462W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT80GP60JDQ3; APT80GP60JDQ3MI

Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 30. Dynamic Parameters vs. Junction Temperature
2500
2000
1500
1000
200
180
160
140
120
100
500
600
500
400
300
200
100
Figure 32. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
Figure 26. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
V
t
J
F
rr
R
F
T
= 125°C
200 400 600 800 1000 1200 1400 1600
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
= 400V
J
, JUNCTION TEMPERATURE (°C)
25
0.5
I
V
RRM
T
R
J
, REVERSE VOLTAGE (V)
T
= 125°C
60A
J
50
= 175°C
1.0
30A
Q
10
rr
75
1.5
T
J
100
T
= 25°C
J
= -55°C
t
rr
2.0
Q
125
rr
120A
100 200
150
2.5
Figure 27. Reverse Recovery Time vs. Current Rate of Change
Figure 31. Maximum Average Forward Current vs. CaseTemperature
Figure 29. Reverse Recovery Current vs. Current Rate of Change
160
140
120
100
100
80
60
40
20
60
50
40
30
20
10
80
60
40
20
0
0
0
0
0
25
-di
-di
T
V
F
J
R
F
200 400 600 800 1000 1200 1400 1600
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
200 400 600 800 1000 1200 1400 1600
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
50
Case Temperature (°C)
75
120A
30A
100
120A
60A
125
60A
Duty cycle = 0.5
T
J
T
150
V
J
R
= 175°C
= 125°C
= 400V
30A
175