APT80GP60JDQ3 Microsemi Power Products Group, APT80GP60JDQ3 Datasheet - Page 3
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APT80GP60JDQ3
Manufacturer Part Number
APT80GP60JDQ3
Description
IGBT 600V 151A 462W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT80GP60JDQ3.pdf
(9 pages)
Specifications of APT80GP60JDQ3
Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 80A
Current - Collector (ic) (max)
151A
Current - Collector Cutoff (max)
1.25mA
Input Capacitance (cies) @ Vce
9.84nF @ 25V
Power - Max
462W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT80GP60JDQ3
APT80GP60JDQ3MI
APT80GP60JDQ3MI
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
120
100
500
400
300
200
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
0
-50
FIGURE 1, Output Characteristics(T
V
0
0
6
CE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
1
GE
250µs PULSE
T
-25
J
0.5
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
8
T
J
T
T
T
= -55°C
J
J
J
0
= 125°C
3
= 25°C
= 125°C
1.0
10
4
25
T
T
J
J
1.5
= 25°C
= -55°C
5
50
12
6
2.0
7
75
14
8
2.5
J
100 125
= 25°C)
9
3.0
16
10
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
120
100
200
180
160
140
120
100
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50
-50
V
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 80A
-25
-25
T
0.5
V
50
T
J
GE
T
= 125°C
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
T
0
J
0
GATE CHARGE (nC)
= 25°C
100
1.0
25
T
J
25
= -55°C
150
1.5
50
50
75 100 125 150
200
2.0
75
V
CE
= 480V
250
2.5
J
100
= 125°C)
300
125
3.0