APT80GP60JDQ3 Microsemi Power Products Group, APT80GP60JDQ3 Datasheet - Page 5

• Manufacturer Part Number: APT80GP60JDQ3
• Description: IGBT 600V 151A 462W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT80GP60JDQ3

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 80A
• Current - Collector (ic) (max): 151A
• Current - Collector Cutoff (max): 1.25mA
• Input Capacitance (cies) @ Vce: 9.84nF @ 25V
• Power - Max: 462W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT80GP60JDQ3; APT80GP60JDQ3MI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature(°C)
20,000
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5000
1000
0.30
0.25
0.20
0.15
0.10
0.05
Junction
temp (°C)
V
50
10
CE
5
1
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.0260
0.0584
0.185
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
oes
0.00119
0.0354
0.463
res
50
10
SINGLE PULSE
-3
190
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
10 20 30 40 50 60 70 80 90 100 110 120
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 5Ω
300
250
200
150
100
= 400V
Figure 18,Minimim Switching Safe Operating Area
-2
50
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
100
, COLLECTOR TO EMITTER VOLTAGE
200
Note:
Peak T J = P DM x Z θJC + T C
300
10
Duty Factor D =
-1
400
t 1
t 2
500
t 1
/
t 2
APT80GP60JDQ3
600
F
f
f
P
max1
max2
max
diss
1.0
700
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f