APT80GP60JDQ3 Microsemi Power Products Group, APT80GP60JDQ3 Datasheet - Page 2
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APT80GP60JDQ3
Manufacturer Part Number
APT80GP60JDQ3
Description
IGBT 600V 151A 462W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT80GP60JDQ3.pdf
(9 pages)
Specifications of APT80GP60JDQ3
Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 80A
Current - Collector (ic) (max)
151A
Current - Collector Cutoff (max)
1.25mA
Input Capacitance (cies) @ Vce
9.84nF @ 25V
Power - Max
462W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT80GP60JDQ3
APT80GP60JDQ3MI
APT80GP60JDQ3MI
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
V
SSOA
adding to the IGBT turn-on loss. (See Figure 24.)
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
Isolation
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
JC
JC
g
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
RMS Voltage
ces
includes both IGBT and FRED leakages
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
3
6
6
4
4
4
55
5
Inductive Switching (125°C)
15V, L = 100µH,V
Inductive Switching (25°C)
T
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
V
T
V
V
V
f = 1 MHz
J
CC
CC
CE
I
I
I
R
J
R
GE
GE
GE
C
C
C
= +125°C
= +25°C
G
G
= 80A
= 80A
= 80A
= 300V
= 400V
= 400V
= 5Ω
= 5Ω
= 15V
= 15V
= 15V
G
CE
= 5Ω, V
CE
= 25V
= 600V
GE
=
2500
MIN
330
MIN
9840
1535
1200
2155
1690
TYP
735
280
115
795
150
795
29.2
TYP
7.5
40
65
85
29
40
80
29
40
85
MAX
MAX
.27
.60
UNIT
UNIT
°C/W
Volts
nC
pF
µ
µ
gm
ns
ns
V
A
J
J