MRF89XA-I/MQ Microchip Technology, MRF89XA-I/MQ Datasheet - Page 18

• Manufacturer Part Number: MRF89XA-I/MQ
• Description: TXRX ISM SUB-GHZ ULP 32QFN
• Manufacturer: Microchip Technology

Specifications of MRF89XA-I/MQ

• Package / Case: 32-WFQFN Exposed Pad
• Frequency: 863MHz ~ 870MHz, 902MHz ~ 928MHz, 950MHz ~ 960MHz
• Data Rate - Maximum: 200kbps
• Modulation Or Protocol: FSK, OOK
• Applications: ISM
• Power - Output: 12.5dBm
• Sensitivity: -113dBm
• Voltage - Supply: 2.1 V ~ 3.6 V
• Current - Receiving: 3mA
• Current - Transmitting: 25mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Operating Temperature: -40°C ~ 85°C
• Number Of Receivers: 1
• Number Of Transmitters: 1
• Wireless Frequency: 863 MHz to 870 MHz, 902 MHz to 928 MHz, 950 MHz to 960 MHz
• Interface Type: SPI
• Noise Figure: - 112 dBc
• Output Power: - 8.5 dBm, + 12.5 dBm
• Operating Supply Voltage: 2.1 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Maximum Data Rate: 256 Kbps
• Maximum Supply Current: 25 mA
• Minimum Operating Temperature: - 40 C
• Modulation: FSK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Memory Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MRF89XA
3.1
The MRF89XA is a high-performance radio frequency
device. It satisfies:
• Class II of the JEDEC standard JESD22-A114-B
• Class III of the JEDEC standard JESD22-C101C
It should thus be handled with all the necessary ESD
precautions to avoid any permanent damage.
TABLE 3-1:
TABLE 3-2:
DS70622A-page 18
Ambient Operating Temperature
Supply Voltage for RF, Analog and Digital Circuits
Supply Voltage for Digital I/O
Input High Voltage (V
Input Low Voltage (V
DC Voltage on Open Collector Outputs (RFIO)
AC Peak Voltage on Open Collector Outputs (IO)
Note 1:
Sleep
Idle
Frequency Synthesizer
TX
TX
RX
Note 1:
(Human Body Model) of 2 KV, except on all of the
RF pins where it satisfies Class 1A.
(Charged Device Model) on all pins.
2:
2:
3:
ESD Notice
Chip Mode
At minimum, V
At maximum, V
Guaranteed by design and characterization.
Crystal C
Measurement Conditions: Temp = 25°C, V
frequency = 869 or 915 MHz, modulation FSK, data rate = 25 kb/s, F
otherwise specified.
RECOMMENDED OPERATING CONDITIONS
CURRENT CONSUMPTION
Parameter
LOAD
IL
IH
)
)
DD
= 10 pF, C0 = 2.5 pF, R
DD
– 1.5V should not be lower than 1.8V.
+ 1.5V should not be higher than 3.7V.
Min
—
—
—
—
—
—
Advance Information
(1,2)
Typ
0.1
1.3
3.0
65
25
16
(1)
(3)
M
= 15 Ohms.
V
V
0.5 * V
DD
DD
DD
-0.3V
Min
-40
2.1
2.1
= 3.3V, crystal frequency = 12.8 MHz, carrier
Max
1.7
3.5
– 1.5
– 1.5
80
30
21
2
DD
Typ
—
—
—
—
—
—
—
Unit
mA
mA
mA
mA
µA
µA
V
V
V
0.2 * V
DD
DD
DD
Sleep clock disabled, all blocks disabled
Oscillator and baseband enabled
Frequency synthesizer running
Output power = +10 dBm
Output power = +1 dBm
Max
+85
3.6
3.6
+ 0.3
+ 1.5
+ 1.5
DEV
DD
= 50 kHz, fc = 100 kHz, unless
 2010 Microchip Technology Inc.
Unit
°C
V
V
V
V
V
V
Condition
—
(1)
Condition
—
—
—
—
—
—
—
(2)