RMPA2550 Fairchild Semiconductor, RMPA2550 Datasheet

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RMPA2550

Manufacturer Part Number
RMPA2550
Description
IC MOD RF POWER AMP 20PIN 3X4QFN
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RMPA2550

Current - Supply
250mA
Frequency
2.4GHz ~ 2.5GHz, 5.15GHz ~ 5.85GHz
Gain
26dB
Package / Case
20-QFN
Rf Type
802.11/Wi-Fi, WLAN
Voltage - Supply
3V ~ 3.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Test Frequency
-
Other names
RMPA2550
RMPA2550TR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
RMPA2550
Manufacturer:
FAI
Quantity:
18 000
©2004 Fairchild Semiconductor Corporation
RMPA2550
2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
General Description
The RMPA2550 is a dual frequency band power amplifier
designed for high performance WLAN applications in the
2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The
single low profile 20 pin 3 x 4 x 0.9 mm package with
internal matching on both input and output to 50 Ω
minimizes next level PCB space and allows for simplified
integration. The two on-chip detectors provide power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Features
• Dual band operation in a single package design
• 26 dB modulated gain 2.4 to 2.5 GHz band
Electrical Characteristics
Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Electrical Characteristics
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth
Notes:
1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50 Ω system. VL adjusted for either 2.4
2: Percentage includes system noise floor of EVM=0.8%.
3: Not measured 100% in production.
4: P
5: Measured at P
6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, P
7: P
Frequency
Supply Voltage
Gain
Total Current @ 18dBm P
Total Current @ 19dBm P
EVM @ 18dBm P
EVM @ 19dBm P
Detector Output @ 19dBm P
Detector Threshold
P
Frequency
Supply Voltage
Gain
Total Current
First Sidelobe Power
Second Sidelobe Power
Max P
OUT
or 5 GHz operation.
OUT
IN
is adjusted to point where performance approaches spectral mask requirements.
Spectral Mask Compliance
OUT
measured at P
Spectral Mask Compliance
IN
Parameter
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
Parameter
IN
OUT
OUT
4
corresponding to power detection threshold.
2
2
OUT
OUT
OUT
5,7
7
OUT
Minimum
1,3 802.11g/a OFDM
3,6
24.5
=+23 dBm, 50 Ω system. Satisfies spectral mask.
3.0
2.4
802.11b CCK
Minimum
24.5
2.4
3.0
Typical
21.0
150
157
508
3.3
2.0
3.0
5.0
26
Typical
24.0
250
3.3
26
Maximum
• 27 dB modulated gain 5.15 to 5.85 GHz band
• 26 dBm output power @ 1 dB compression both
• 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz
• 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz
• 3.3 V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
• Separate integrated power detectors with 20 dB dynamic
• Low profile 20 pin, 3 x 4 x 0.9 mm standard
• Internally matched to 50 ohms
• Optimized for use in 802.11a/b/g
frequency bands
control)
range
QFN leadless package
applications
182
189
600
2.5
3.6
2.5
3.5
7.0
28
Maximum
-40
-55
2.5
3.6
28
Minimum
5.15
25.5
3.0
GHz
dBm
Unit
dBc
dBc
mA
dB
V
Typical
21.0
228
235
780
3.3
2.5
3.5
5.0
27
Maximum
5.85
260
267
865
3.6
3.5
4.5
7.0
29
August 2004
Device
RMPA2550 Rev. D
GHz
dBm
dBm
Unit
mA
mA
mV
dB
%
%
V

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RMPA2550 Summary of contents

Page 1

... RMPA2550 2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier General Description The RMPA2550 is a dual frequency band power amplifier designed for high performance WLAN applications in the 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The single low profile 20 pin 0.9 mm package with internal matching on both input and output to 50 Ω ...

Page 2

... V 7.0 9.0 dBm -30 dBc -35 dBc VL 5.0 0.0 0.8 V 2.0 2.4 V 100 µA <1 µS <1 µS -65 dBc Value Units 5 V 820 mA 700 mA 4 dBm -40 to +85 °C -55 to +150 °C RMPA2550 Rev. D ...

Page 3

... OUTPUT MATCH DETECTOR Backside Ground Pin Description 1 VM 2.4 2 DT2 2.4 3 DT1 2.4 (Vdet) 4 VC2 2 OUT 2.4 7 N OUT 5.0 10 DT1 5.0 (Vdet) 11 VC3 5.0 12 VC2 5.0 13 VM2 5 5.0 15 VM13 5.0 16 VC1 5 5.0 18 VC1 2 2 2.4 RMPA2550 Rev. D ...

Page 4

... Performance Data 802.11g/a Frequency Dependency RMPA2550 Total Measured EVM Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 2.40 GHz 2.45 GHz 2.50 GHz 4 Includes 0.8% System Level EVM Modulated Power Out (dBm) RMPA2550 Detector Voltage Vs. Modulated Pout 2 ...

Page 5

... GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz Modulated Power Out (dBm) 802.11g/a Temperature Dependency RMPA2550 Total Measured EVM Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz 10 8 T=-40C 6 T=+25C T=+85C 4 Includes 0.8% System Level EVM 2 0 ...

Page 6

... GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz Modulated Power Out (dBm) 802.11g/a VM Dependency RMPA2550 Total Measured EVM Vs. Modulated Pout 2.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 10 VM=2.7V VM=2.8V 8 VM=2.9V VM=3.0V VM=3.1V VM=3.2V 6 VM=3.3V 4 Includes 0.8% System Level EVM ...

Page 7

... RMPA2550 Total Current Vs. Modulated Pout 300 250 200 150 100 RMPA2550 Total Quiescent Bias Current Vs. VM Voltage 250 200 150 100 50 0 3.1 3.2 3.3 3.4 2.6 2.7 for VM=2.7 to 3.3V, VC=3.3V, T=25C Data Rate 54Mbps OFDM 16.7MHz VM=2 ...

Page 8

... Single Tone Power Out (dBm) RMPA2550 S-Parameters 2.4 GHz Band T=25C VM, VC=3. -20 -40 -60 2 2.2 2.4 Frequency (GHz) ©2004 Fairchild Semiconductor Corporation RMPA2550 Single Tone Gain Vs. Power Out RMPA2550 Single Tone Gain Vs. Power Out -20 S11 Mag S21 Mag -40 S22 Mag -60 2.6 2 ...

Page 9

... Frequency (MHz) RMPA2550 802.11a Spectral Mask 5.25 GHz T=25C VM 3.3V +10dBm Pout(dBr) +16dBm Pout(dBr) +20dBm Pout(dBr) Mask (dBr) 5220 5240 5260 5280 Frequency (MHz) +14dBm Pou t(dBr) +17dBm Pou t(dBr) +21dBm Pou t(dBr) ...

Page 10

... Package Outline Dimensions in inches [mm] Bottom View as Viewed from Bottom ©2004 Fairchild Semiconductor Corporation Detail B Front Side View Detail A RMPA2550 Rev. D ...

Page 11

... Evaluation Board Schematic Evaluation Board Bill of Materials ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D ...

Page 12

... Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design. ©2004 Fairchild Semiconductor Corporation Actual Board Size = 2.0" X 1.5" 1 Pin VL 5.0 VC (total) 5.0 VM (total) 5.0 Pin VL 2.4 VC (total) 2.4 VM 2.4 Current <1 nA <1 nA <1.9 mA Current <0.25mA <1 nA <0.7mA RMPA2550 Rev. D ...

Page 13

... Precautions to Avoid Permanent Device Damage: Static Sensitivity: Follow ESD precautions to protect against ESD damage: • A properly grounded static-dissipative surface on which to place devices. • Static-dissipative floor or mat. • A properly grounded conductive wrist strap for each person to wear while handling devices. ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D ...

Page 14

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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