FDMS2510SDC Fairchild Semiconductor, FDMS2510SDC Datasheet - Page 6

• Manufacturer Part Number: FDMS2510SDC
• Description: MOSFET N-CH 20V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2510SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2780pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 mOhms
• Forward Transconductance Gfs (max / Min): 159 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2510SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C1
Typical Characteristics
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
T
J
= 25 °C unless otherwise noted
10
-2
SINGLE PULSE
R
θ
JA
t, RECTANGULAR PULSE DURATION (sec)
= 81
o
C/W
10
-1
6
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
10
x Z
P
θJA
DM
1
/t
x R
2
θJA
t
1
+ T
t
2
A
100
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1000