FDMS8025S Fairchild Semiconductor, FDMS8025S Datasheet - Page 4

• Manufacturer Part Number: FDMS8025S
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS8025S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 mOhms
• Forward Transconductance Gfs (max / Min): 145 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS8025STR

©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
Typical Characteristics
0.01
200
100
0.1
10
10
40
10
Figure 7.
8
6
4
2
0
1
1
0.01
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r
I
Figure 11. Forward Bias Safe
D
= 24 A
V
Switching Capability
V
DD
Gate Charge Characteristics
DS
0.1
10
0.1
t
= 10 V
SINGLE PULSE
T
R
T
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
AV
Unclamped Inductive
J
A
θ
DS(on)
, TIME IN AVALANCHE (ms)
JA
Q
= MAX RATED
= 25
V
g
DD
= 125
, GATE CHARGE (nC)
= 15 V
T
o
J
C
= 125
o
C/W
1
20
1
o
C
T
V
T
J
DD
= 25
J
= 20 V
= 25°C unless otherwise noted
o
T
C
10
J
= 100
30
10
o
C
100
1 ms
10 ms
100 ms
10 s
1 s
DC
100200
μ
s
40
100
4
2000
1000
5000
1000
100
120
100
0.5
100
10
80
60
40
20
Figure 10.
50
1
0
10
0.1
25
Figure 12.
-4
Limited by Package
Figure 8.
SINGLE PULSE
R
T
Current vs Case Temperature
f = 1 MHz
V
A
θ
GS
JA
= 25
10
= 125
= 0 V
-3
V
o
50
C
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
V
T
C/W
10
GS
C
Single Pulse Maximum
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
-2
CASE TEMPERATURE (
= 4.5 V
75
10
1
-1
V
GS
= 10 V
1
100
R
θ
JC
= 2.5
10
o
C )
o
125
C/W
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10
100
C
C
C
oss
iss
rss
1000
150
30