FDMS7682 Fairchild Semiconductor, FDMS7682 Datasheet - Page 3

• Manufacturer Part Number: FDMS7682
• Description: MOSFET N-CH 30V 22A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7682

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1885pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.3 mOhms
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS7682TR

FDMS7682 Rev.C
Typical Characteristics
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
80
60
40
20
Figure 3. Normalized On Resistance
0
0
Figure 1.
-75
1
0
Figure 5. Transfer Characteristics
I
V
D
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
= 14 A
DS
-50
= 10 V
vs Junction Temperature
= 5 V
V
V
DS
T
-25
GS
V
J
On Region Characteristics
,
V
GS
,
, GATE TO SOURCE VOLTAGE (V)
2
JUNCTION TEMPERATURE (
V
GS
DRAIN TO SOURCE VOLTAGE (V)
GS
= 5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
= 10 V
1
0
= 4.5 V
J
= 150
25
μ
o
s
C
3
50
T
J
= 25 °C unless otherwise noted
T
75
J
2
= -55
T
μ
J
s
= 25
4
100 125 150
o
C )
o
V
C
V
GS
o
GS
C
= 3.5 V
= 4 V
3
5
3
0.01
100
0.1
25
20
15
10
10
5
0
1
5
4
3
2
1
0
Figure 2.
Figure 4.
0.2
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
GS
T
= 0 V
= 3.5 V
V
J
SD
= 150
0.4
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
20
Source Voltage
4
o
Source to Drain Diode
,
C
GATE TO SOURCE VOLTAGE (V)
I
D
,
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
D
DRAIN CURRENT (A)
= 14 A
0.6
μ
s
40
6
V
T
T
GS
J
V
J
0.8
= 125
= 25
GS
= 4 V
T
= 5 V
J
o
o
C
= -55
C
T
J
60
μ
8
= 25
s
1.0
www.fairchildsemi.com
V
o
V
C
GS
GS
o
= 4.5 V
C
= 10 V
1.2
80
10