FDZ3N513ZT Fairchild Semiconductor, FDZ3N513ZT Datasheet - Page 4

• Manufacturer Part Number: FDZ3N513ZT
• Description: MOSFET N-CH 30V WLCSP 2X2
• Manufacturer: Fairchild Semiconductor

Specifications of FDZ3N513ZT

• Fet Type: MOSFET N-Channel, Schottky, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 462 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 85pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 462 mOhms
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 5.5 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ3N513ZTTR

©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
Typical Characteristics
Figure 11. Schottky Diode Reverse Current
0.001
0.01
0.1
10
5
4
3
2
1
0
Figure 7.
1
0
0.1
10
10
10
10
10
-2
-3
-4
-5
-6
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
I
0
D
Figure 9. Forward Bias Safe
J
C
θ
JA
= 0.3 A
= MAX RATED
= 25
= 260
V
o
Gate Charge Characteristics
C
DS
0.3
5
o
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
C/W
Q
DS(on)
g
V
, GATE CHARGE (nC)
R
1
,
V
10
REVERSE VOLTAGE (V)
DD
= 10 V
0.6
T
T
T
T
J
J
J
J
V
= 125
= 85
= 60
15
= 25
DD
T
J
= 20 V
o
o
= 25°C unless otherwise noted
o
o
C
C
C
C
10
20
V
DD
0.9
= 15 V
25
10 ms
1 ms
100 ms
1 s
10 s
DC
1.2
100
30
4
Figure 12. Schottky Diode Forward Voltage
0.001
-0.0005
0.0030
0.0025
0.0020
0.0015
0.0010
0.0005
0.0000
500
100
0.01
0.1
10
0.1
5
1
Figure 10. Gate Leakage Current vs
0
Figure 8.
0
f = 1 MHz
V
GS
V
= 0 V
DS
V
T
DS
= 0 V
J
V
to Source Voltage
2
, DRAIN TO SOURCE VOLTAGE (V)
= 125
GS ,
V
0.2
Capacitance vs Drain
F
Gate to Source Voltage
,
GATE TO SOURCE VOLTAGE (V)
FORWARD VOLTAGE (V)
o
C
T
4
J
1
= 25
C
C
C
T
rss
iss
oss
J
o
= 60
C
0.4
6
T
J
o
= 85
C
T
J
= 125
o
C
8
0.6
o
T
C
10
J
www.fairchildsemi.com
= 25
10
o
C
30
12
0.8