MPC5553MZQ132 Freescale Semiconductor, MPC5553MZQ132 Datasheet - Page 9

IC MCU MPC5553 REV A 324-PBGA

MPC5553MZQ132

Manufacturer Part Number
MPC5553MZQ132
Description
IC MCU MPC5553 REV A 324-PBGA
Manufacturer
Freescale Semiconductor
Series
MPC55xx Qorivvar
Datasheet

Specifications of MPC5553MZQ132

Core Processor
e200z6
Core Size
32-Bit
Speed
132MHz
Connectivity
CAN, EBI/EMI, Ethernet, SCI, SPI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
220
Program Memory Size
1.5MB (1.5M x 8)
Program Memory Type
FLASH
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
1.35 V ~ 1.65 V
Data Converters
A/D 40x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
324-PBGA
Processor Series
MPC5xxx
Core
e200z6
Data Bus Width
32 bit
Data Ram Size
64 KB
Interface Type
7-Wire, DSPI, ESCI
Maximum Clock Frequency
132 MHz
Number Of Timers
56
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
For Use With
MPC5553EVBISYS - KIT EVAL ISYSTEMS MPC5553MPC5553EVBGHS - KIT EVAL GREEN HILLS SOFTWAREMPC5553EVB - KIT EVAL MPC5553MZP132MPC5553EVBE - BOARD EVAL FOR MPC5553
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPC5553MZQ132
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Company:
Part Number:
MPC5553MZQ132
Quantity:
20
3.3
The MPC5553 is available in packaged form. Read the package options in
Information.”
3.4
1
2
3
3.5
1
2
Freescale Semiconductor
ESD for human body model (HBM)
HBM circuit description
ESD for field induced charge model (FDCM)
Number of pulses per pin:
Interval of pulses
Spec
EMI testing and I/O port waveforms per SAE J1752/3 issued 1995-03. Qualification testing was performed on the MPC5554
and applied to the MPC5500 family as generic EMI performance data.
Measured with the single-chip EMI program.
Measured with the expanded EMI program.
All ESD testing conforms to CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
Device failure is defined as: ‘If after exposure to ESD pulses, the device does not meet the device specification requirements,
which includes the complete DC parametric and functional testing at room temperature and hot temperature.
1
2
3
4
5
6
7
Positive pulses (HBM)
Negative pulses (HBM)
Scan range
Operating frequency
V
V
V
Maximum amplitude
Operating temperature
DD
DDSYN
PP
, V
Package
EMI (Electromagnetic Interference) Characteristics
ESD (Electromagnetic Static Discharge) Characteristics
operating voltages
DDEH
, V
Refer to
RC33
, V
DDA
, V
Characteristic
DD33
operating voltages
Section 4, “Mechanicals,”
Characteristic
, V
FLASH
, V
MPC5553 Microcontroller Data Sheet, Rev. 3.0
Table 4. EMI Testing Specifications
DDE
operating voltages
Table 5. ESD Ratings
for pinouts and package drawings.
Symbol
Minimum
R1
C
0.15
1, 2
750 (corner pins)
1
500 (all pins)
Typical
Value
1.5
3.3
5.0
2000
1500
Section 2, “Ordering
100
1
1
1
Electrical Characteristics
Maximum
1000
f
14
32
MAX
25
2
3
second
Unit
pF
V
Ω
V
dBuV
MHz
MHz
Unit
o
V
V
V
C
9

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