STR912FW44X6 STMicroelectronics, STR912FW44X6 Datasheet - Page 61
STR912FW44X6
Manufacturer Part Number
STR912FW44X6
Description
MCU 512K FLASH 96K SRAM USB CAN
Manufacturer
STMicroelectronics
Series
STR9r
Datasheet
1.STR910FM32X6.pdf
(73 pages)
Specifications of STR912FW44X6
Core Processor
ARM9
Core Size
32-Bit
Speed
96MHz
Connectivity
CAN, EBI/EMI, Ethernet, I²C, IrDA, Microwire, SPI, SSI, SSP, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, WDT
Number Of I /o
80
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
96K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 2 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
128-LQFP
For Use With
497-8267 - BOARD EVAL BASED ON STR9MCBSTR9UME - BOARD EVAL MCBSTR9 + ULINK-MEMCBSTR9U - BOARD EVAL MCBSTR9 + ULINK2497-5859 - EVAL BRD FULL USB DONGLE STR912MCBSTR9 - BOARD EVAL STM STR9 SERIES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
497-5063-2
497-5063-2
497-5063-2ND
STR912FW44X6T
497-5063-2
497-5063-2ND
STR912FW44X6T
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STR912FW44X6
Manufacturer:
ST
Quantity:
20 000
STR91xF
Figure 15. ADC conversion characteristics
1023
1022
1021
7
6
5
4
3
2
1
0
V
SSA
Digital Result
1
E
1LSB
O
2
IDEAL
3
=
V
---------------------------------------- -
DDA
4
1024
–
V
5
SSA
1 LSB
E
6
T
IDEAL
E
7
L
(2)
E
D
1021 1022 1023 1024
(3)
(1)
E
G
V
DDA
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
deviation between the actual and the ide-
al transfer curves.
E
first actual transition and the first ideal
one.
E
last ideal transition and the last actual
one.
E
deviation between actual steps and the
ideal one.
E
deviation between any actual transition
and the end point correlation line.
T
O
G
D
L
=Total Unadjusted Error: maximum
=Integral Linearity Error: maximum
=Differential Linearity Error: maximum
=Offset Error: deviation between the
=Gain Error: deviation between the
V
in
(LSB
IDEAL
)
Electrical characteristics
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