AT90S2313-4SI Atmel, AT90S2313-4SI Datasheet - Page 69

• Manufacturer Part Number: AT90S2313-4SI
• Description: MCU 2K FLASH 4MHZ 20-SOIC
• Manufacturer: Atmel
• Series: AVR® 90Sr

Specifications of AT90S2313-4SI

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 4MHz
• Connectivity: SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 15
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 6 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-SOIC (7.5mm Width)
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: SPI, UART
• Maximum Clock Frequency: 4 MHz
• Number Of Programmable I/os: 15
• Number Of Timers: 1 x 8 bit
• Operating Supply Voltage: 2.7 V to 6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Data Converters: -
• Lead Free Status / Rohs Status: No

Data Polling EEPROM
0839I–AVR–06/02
4. If a Chip Erase is performed (must be done to erase the Flash), wait t
5. The Flash or EEPROM array is programmed one byte at a time by supplying the
6. Any memory location can be verified by using the Read instruction that returns
7. At the end of the programming session, RESET can be set high to commence
8. Power-off sequence (if needed):
When a byte is being programmed into the EEPROM, reading the address location
being programmed will give the value P1 until the auto-erase is finished, and then the
value P2. See Table 27 for P1 and P2 values.
At the time the device is ready for a new EEPROM byte, the programmed value will read
correctly. This is used to determine when the next byte can be written. This will not work
for the values P1 and P2, so when programming these values, the user will have to wait
for at least the prescribed time t
30 for t
ming of addresses that are meant to contain $FF can be skipped. This does not apply if
the EEPROM is reprogrammed without first chip-erasing the device.
Table 27. Read Back Value during EEPROM Polling
Part
AT90S2313
ing the third byte of the Programming Enable instruction. Whether the echo is
correct or not, all four bytes of the instruction must be transmitted. If the $53 did
not echo back, give SCK a positive pulse and issue a new Programming Enable
instruction. If the $53 is not seen within 32 attempts, there is no functional device
connected.
after the instruction, give RESET a positive pulse, and start over from step 2.
See Table 30 for t
address and data together with the appropriate Write instruction. An EEPROM
memory location is first automatically erased before new data is written. Use
Data Polling to detect when the next byte in the Flash or EEPROM can be writ-
ten. If polling is not used, wait t
See Table 31 for t
need to be programmed.
the content at the selected address at the serial output MISO (PB6) pin.
normal operation.
Set XTAL1 to “0” (if a crystal is not used).
Set RESET to “1”.
Turn V
WD_PROG
CC
power off.
value. As a chip-erased device contains $FF in all locations, program-
WD_ERASE
WD_PROG
value. In an erased device, no $FFs in the data file(s)
value.
WD_PROG
WD_PROG
before programming the next byte. See Table
before transmitting the next instruction.
P1
$80
AT90S2313
P2
$7F
WD_ERASE
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