AT90S2313-4SI Atmel, AT90S2313-4SI Datasheet - Page 40

• Manufacturer Part Number: AT90S2313-4SI
• Description: MCU 2K FLASH 4MHZ 20-SOIC
• Manufacturer: Atmel
• Series: AVR® 90Sr

Specifications of AT90S2313-4SI

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 4MHz
• Connectivity: SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 15
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 6 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-SOIC (7.5mm Width)
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: SPI, UART
• Maximum Clock Frequency: 4 MHz
• Number Of Programmable I/os: 15
• Number Of Timers: 1 x 8 bit
• Operating Supply Voltage: 2.7 V to 6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Data Converters: -
• Lead Free Status / Rohs Status: No

EEPROM Control Register –
EECR
40
AT90S2313
• Bit 7..3 – Res: Reserved Bits
These bits are reserved bits in the AT90S2313 and will always read as zero.
• Bit 2 – EEMWE: EEPROM Master Write Enable
The EEMWE bit determines whether setting EEWE to one causes the EEPROM to be
written. When EEMWE is set (one), setting EEWE will write data to the EEPROM at the
selected address. If EEMWE is zero, setting EEWE will have no effect. When EEMWE
has been set (one) by software, hardware clears the bit to zero after four clock cycles.
See the description of the EEWE bit for a EEPROM write procedure.
• Bit 1 – EEWE: EEPROM Write Enable
The EEPROM Write Enable Signal (EEWE) is the write strobe to the EEPROM. When
address and data are correctly set up, the EEWE bit must be set to write the value into
the EEPROM. The EEMWE bit must be set when the logical “1” is written to EEWE, oth-
erwise no EEPROM write takes place. The following procedure should be followed
when writing the EEPROM (the order of steps 2 and 3 is unessential):
1. Wait until EEWE becomes zero.
2. Write new EEPROM address to EEAR (optional).
3. Write new EEPROM data to EEDR (optional).
4. Write a logical “1” to the EEMWE bit in EECR (to be able to write a logical “1” to
5. Within four clock cycles after setting EEMWE, write a logical “1” to EEWE.
When the write access time (typically 2.5 ms at V
elapsed, the EEWE bit is cleared (zero) by hardware. The user software can poll this bit
and wait for a zero before writing the next byte. When EEWE has been set, the CPU is
halted for two cycles before the next instruction is executed.
Caution: An interrupt between step 4 and step 5 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the
EEPROM is interrupting another EEPROM access, the EEAR or EEDR Register will be
modified, causing the interrupted EEPROM access to fail. It is recommended to have
the Global Interrupt Flag cleared during the last four steps to avoid these problems.
• Bit 0 – EERE: EEPROM Read Enable
The EEPROM Read Enable Signal (EERE) is the read strobe to the EEPROM. When
the correct address is set up in the EEAR Register, the EERE bit must be set. When the
EERE bit is cleared (zero) by hardware, requested data is found in the EEDR Register.
The EEPROM read access takes one instruction and there is no need to poll the EERE
bit. When EERE has been set, the CPU is halted for four cycles before the next instruc-
tion is executed.
The user should poll the EEWE bit before starting the read operation. If a write operation
is in progress when new data or address is written to the EEPROM I/O Registers, the
write operation will be interrupted and the result is undefined.
Bit
$1C ($3C)
Read/Write
Initial value
the EEMWE bit, the EEWE bit must be written to zero in the same cycle).
R
7
–
0
R
6
–
0
5
–
R
0
R
4
–
0
R
3
–
0
CC
= 5V or 4 ms at V
EEMWE
R/W
2
0
EEWE
R/W
1
0
EERE
CC
R/W
0
0
0839I–AVR–06/02
= 2.7V) has
EECR