SAA-XC866L-1FRA AB Infineon Technologies, SAA-XC866L-1FRA AB Datasheet - Page 46

IC MCU 8BIT 4KB FLASH 38TSSOP

SAA-XC866L-1FRA AB

Manufacturer Part Number
SAA-XC866L-1FRA AB
Description
IC MCU 8BIT 4KB FLASH 38TSSOP
Manufacturer
Infineon Technologies
Series
XC8xxr
Datasheet

Specifications of SAA-XC866L-1FRA AB

Core Processor
XC800
Core Size
8-Bit
Speed
86MHz
Connectivity
LIN, SSI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
27
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2.3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 140°C
Package / Case
38-TSSOP
Data Bus Width
8 bit
Data Ram Size
750 B
Interface Type
UART, SSC
Maximum Clock Frequency
26.67 MHz
Number Of Programmable I/os
27
Number Of Timers
3
Operating Supply Voltage
3.3 V, 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
3.3.2
For the P-Flash banks, a programmed wordline (WL) must be erased before it can be
reprogrammed as the Flash cells can only withstand one gate disturb. This means that
the entire sector containing the WL must be erased since it is impossible to erase a
single WL.
For the D-Flash bank, the same WL can be programmed twice before erasing is required
as the Flash cells are able to withstand two gate disturbs. Hence, it is possible to
program the same WL, for example, with 16 bytes of data in two times (see
Figure 12
Note: When programming a D-Flash WL the second time, the previously programmed
Data Sheet
0000 ….. 0000
0000 ….. 0000
1111 ….. 0000
Flash memory cells (whether 0s or 1s) should be reprogrammed with 0s to retain
its original contents and to prevent “over-programming”.
Flash memory cells
Flash Programming Width
32 bytes (1 WL)
D-Flash Programming
H
H
H
0000 ….. 0000
1111 ….. 1111
1111 ….. 1111
H
H
H
Program 1
Program 2
43
0000 ….. 0000
1111 ….. 0000
Note: A Flash memory cell can be programmed
16 bytes
32-byte write buffers
from 0 to 1, but not from 1 to 0.
Functional Description
H
H
1111 ….. 1111
0000 ….. 0000
SAA-XC866
16 bytes
V1.5, 2010-09
Figure
H
H
12).

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