PCIMX515DJM8C Freescale Semiconductor, PCIMX515DJM8C Datasheet - Page 45
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PCIMX515DJM8C
Manufacturer Part Number
PCIMX515DJM8C
Description
MPU I.MX515 529-MABGAPGE
Manufacturer
Freescale Semiconductor
Series
i.MX51r
Datasheet
1.MCIMX512DJM8C.pdf
(200 pages)
Specifications of PCIMX515DJM8C
Core Processor
ARM Cortex-A8
Core Size
32-Bit
Speed
800MHz
Connectivity
1-Wire, EBI/EMI, Ethernet, I²C, IrDA, MMC, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
128
Program Memory Type
ROMless
Ram Size
128K x 8
Voltage - Supply (vcc/vdd)
0.8 V ~ 1.15 V
Oscillator Type
External
Operating Temperature
-20°C ~ 85°C
Package / Case
529-MABGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-
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AC electrical characteristics in DDR mobile for Slow mode and ovdd=1.65-1.95V, ipp_hve=0 are placed
in
Freescale Semiconductor
1
2
3
Output Pad di/dt (Low drive)
Input Pad Transition Times
Input Pad Propagation Delay (DDR input),
50%-50%
Maximum Input Transition Times
Output Pad Transition Times (High Drive)
Output Pad Transition Times (Medium Drive)
Output Pad Transition Times (Low Drive)
Output Pad Propagation Delay (High Drive)
Output Pad Propagation Delay (Medium Drive)
Output Pad Propagation Delay (Low Drive)
Output Pad Slew Rate (High Drive)
Output Pad Slew Rate (Medium Drive)
Output Pad Slew Rate (Low Drive)
Output Pad di/dt (High Drive)
Output Pad di/dt (Medium drive)
Table
Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5=000000.
Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
Hysteresis mode is recommended for input with transition time greater than 25 ns.
44.
2
Table 44. AC Electrical Characteristics of DDR mobile IO Pads for Slow Mode and
Table 43. AC Electrical Characteristics of DDR_clk mobile IO Pads for Fast mode
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Parameter
Parameter
2
1
1
1
and ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)
3
1
1
1
1
1
ovdd=1.65 – 1.95 V (ipp_hve=0)
1
1
1
1
Symbol
Symbol
di/dt
di/dt
di/dt
trm
tpo
tpo
tpo
tps
tps
tps
tpr
tpr
tpr
trfi
tpi
Condition
Condition
1.2 pF
1.2 pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
Test
Test
—
—
—
—
0.09/0.09 0.132/0.128 0.212/0.213
1.42/1.42
3.01/2.96
2.05/2.04
4.50/4.42
4.06/3.98
8.94/8.86
2.07/2.23
3.21/3.48
2.53/2.74
4.26/4.58
3.93/4.23
7.38/7.91
0.82/0.82
0.39/0.40
0.57/0.57
0.26/0.26
0.29/0.29
0.13/0.13
0.3/0.36
rise/fall
rise/fall
Min
Min
62
47
27
—
1.20/1.27
2.38/2.40
1.67/1.71
3.48/3.52
3.15/3.17
6.92/6.93
2.46/2.62
3.35/3.63
2.83/3.04
4.12/4.49
3.89/4.21
6.43/7.01
0.90/0.85
0.45/0.45
0.65/0.63
0.31/0.31
0.34/0.34
0.16/0.16
0.5/0.52
Typ
Typ
30
—
14
9
Electrical Characteristics
2.92/ 3.02
0.82/0.94
1.43/1.49
2.37/2.44
1.82/1.87
3.16/3.28
5.69/5.96
3.92/3.93
4.84/4.97
4.32/4.35
5.55/5.76
5.37/5.51
7.45/7.94
0.69/0.66
0.42/0.41
0.54/0.53
0.31/0.30
0.34/0.33
0.17/0.17
rise/fall
rise/fall
Max
Max
16
5
9
6
mA/ns
mA/ns
mA/ns
Units
Units
V/ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
—
45
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