PCIMX515DJM8C Freescale Semiconductor, PCIMX515DJM8C Datasheet - Page 42

• Manufacturer Part Number: PCIMX515DJM8C
• Description: MPU I.MX515 529-MABGAPGE
• Manufacturer: Freescale Semiconductor
• Series: i.MX51r

Specifications of PCIMX515DJM8C

• Core Processor: ARM Cortex-A8
• Core Size: 32-Bit
• Speed: 800MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, IrDA, MMC, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: ROMless
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 0.8 V ~ 1.15 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 529-MABGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

Electrical Characteristics
AC electrical characteristics in DDR mobile for Slow mode and ovdd=1.65-1.95V, ipp_hve=0 are placed
in
42
1
2
3
Output Pad Transition Times (High Drive)
Output Pad Transition Times (Medium Drive)
Output Pad Transition Times (Low Drive)
Output Pad Propagation Delay (High Drive)
Output Pad Propagation Delay (Medium Drive)
Output Pad Propagation Delay (Low Drive)
Output Pad Slew Rate (High Drive)
Output Pad Slew Rate (Medium Drive)
Output Pad Slew Rate (Low Drive)
Output Pad di/dt (High Drive)
Output Pad di/dt (Medium drive)
Output Pad di/dt (Low drive)
Input Pad Transition Times
Input Pad Propagation Delay without Hysteresis
(CMOS input), 50%-50%
Input Pad Propagation Delay with Hysteresis
(CMOS input), 50%-50%
Input Pad Propagation Delay (DDR input),
50%-50%
Maximum Input Transition Times
Table
Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5 = 000000.
Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
Hysteresis mode is recommended for input with transition time greater than 25 ns.
40.
2
Table 40. AC Electrical Characteristics of DDR mobile IO Pads for Slow Mode
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Parameter
2
2
2
1
1
1
3
1
1
1
1
1
ovdd=1.65 – 1.95 V (ipp_hve=0)
1
1
1
1
Symbol
di/dt
di/dt
di/dt
tpo
tpo
tpo
trm
tps
tps
tps
tpr
tpr
tpr
trfi
tpi
tpi
tpi
Condition
1.2 pF
1.2 pF
1.2 pF
1.2 pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
15pF
35pF
Test
—
—
—
1.42/1.43
3.03/2.92
2.04/2.04
4.51/4.49
4.08/3.93
9.06/8.93
2.00/2.17
3.15/3.42
2.47/2.68
3.87/4.18
7.32/7.86
0.82/0.82
0.39/0.40
0.57/0.57
0.26/0.26
0.29/0.30
0.13/0.13
0.09/0.09 0.132/0.128 0.212/0.213
0.45/0.93
0.55/0.55
0.38/0.38
4.2/4.53
rise/fall
Min
47
27
12
—
1.20/1.27
2.39/2.38
1.68/1.74
3.47/3.50
3.16/3.19
6.92/6.93
2.33/2.50
3.24/3.52
2.72/2.92
4.01/4.37
3.78/4.10
6.35/6.90
0.90/0.85
0.45/0.49
0.70/0.62
0.31/0.31
0.34/0.34
0.16/0.16
0.58/0.61
0.6/0.58
0.71/0.7
Typ
—
14
9
5
Freescale Semiconductor
1.014/1.07
1.43/1.49
2.35/2.46
1.82/1.91
3.16/3.30
2.90/3.01
5.74/5.96
3.70/3.70
4.63/4.75
4.10/4.16
5.33/5.55
5.13/5.30
7.25/7.73
0.69/0.66
0.42/0.40
0.54/0.52
0.31/0.30
0.34/0.33
0.17/0.17
1.03/0.98
rise/fall
0.9/0.88
Max
9
6
3
5
mA/ns
mA/ns
mA/ns
Units
V/ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—