DF2238RTF6 Renesas Electronics America, DF2238RTF6 Datasheet - Page 777
DF2238RTF6
Manufacturer Part Number
DF2238RTF6
Description
MCU 2.2/3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet
1.DF2238RFA6V.pdf
(1048 pages)
Specifications of DF2238RTF6
Core Processor
H8S/2000
Core Size
16-Bit
Speed
6MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
72
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2238RTF6
HD64F2238RTF6
HD64F2238RTF6
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2238RTF6V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 777 of 1048
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The features of the flash memory are summarized below.
The block diagram of the flash memory is shown in figure 20.1.
20.1
• Capacity
• Programming/erase methods
• Reprogramming capability
• Two programming modes
• Automatic bit rate adjustment
• Programming/erasing protection
H8S/2239: 384 kbytes
H8S/2258: 256 kbytes
H8S/2238B: 256 kbytes
H8S/2238R: 256 kbytes
H8S/2227: 128 kbytes
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block units.
The flash memory of the H8S/2239 is configured as follows: 64 kbytes × 5 blocks, 32 kbytes ×
1 block, and 4 kbytes × 8 blocks. The flash memory of the H8S/2258, H8S/2238B, and
H8S/2238R is configured as follows: 64 kbytes × 3 blocks, 32 kbytes × 1 block, and 4 kbytes ×
8 blocks. The flash memory of the H8S/2227 is configured as follows: 32 kbytes × 2 blocks,
28 kbytes × 1 block, 16 kbytes × 1 block, 8 kbytes × 2 blocks, and 1 kbyte × 4 blocks. To erase
the entire flash memory, each block must be erased in turn.
The flash memory can be reprogrammed for 100 times.
Boot mode
User program mode
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user program
mode, individual blocks can be erased or programmed.
For data transfer in boot mode, this LSI’s bit rate can be automatically adjusted to match the
transfer bit rate of the host.
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase operations.
Features
Section 20 Flash Memory (F-ZTAT Version)
Section 20 Flash Memory (F-ZTAT Version)
Rev. 6.00 Mar. 18, 2010 Page 715 of 982
REJ09B0054-0600
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