D12363VTE33 Renesas Electronics America, D12363VTE33 Datasheet - Page 770
D12363VTE33
Manufacturer Part Number
D12363VTE33
Description
MCU 3V 0K 120-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.DF2368VTE34V.pdf
(1044 pages)
Specifications of D12363VTE33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412363VTE33
HD6412363VTE33
HD6412363VTE33
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D12363VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 19 Flash Memory (0.35-μm F-ZTAT Version)
19.8
There are three kinds of flash memory program/erase protection: hardware protection, software
protection, and error protection.
19.8.1
Hardware protection refers to a state in which programming/erasing of flash memory is forcibly
disabled or aborted because of a transition to reset (including an overflow reset by the WDT) or
standby mode. Flash memory control register 1 (FLMCR1), flash memory control register 2
(FLMCR2), erase block register 1 (EBR1), and erase block register 2 (EBR2) are initialized. In a
reset via the RES pin, the reset state is not entered unless the RES pin is held low until oscillation
stabilizes after powering on. In the case of a reset during operation, hold the RES pin low for the
RES pulse width specified in the AC Characteristics section.
19.8.2
Protection can be implemented against programming/erasing of all flash memory blocks by
clearing the SWE bit in FLMCR1 to 0. When protection is in effect, setting the P or E bit in
FLMCR1 does not cause a transition to program mode or erase mode. By setting the erase block
register 1 (EBR1) and erase block register 2 (EBR2), erase protection can be set for individual
blocks. When EBR1 and EBR2 are set to H'00, erase protection is set for all blocks.
19.8.3
In error protection, an error is detected when the CPU’s runaway occurs during flash memory
programming/erasing, or operation is not performed in accordance with the program/erase
algorithm, and the program/erase operation is forcibly aborted. Aborting the program/erase
operation prevents damage to the flash memory due to overprogramming or overerasing.
When the following errors are detected during programming/erasing of flash memory, the FLER
bit in FLMCR2 is set to 1, and the error protection state is entered.
• When flash memory is read during programming/erasing (including a vector read or instruction
• When an exception handling (excluding a reset) is started during programming/erasing
• When a SLEEP instruction is executed during programming/erasing
• When the CPU releases the bus during programming/erasing
Rev.6.00 Mar. 18, 2009 Page 710 of 980
REJ09B0050-0600
fetch)
Program/Erase Protection
Hardware Protection
Error Protection
Software Protection
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