D12363VTE33 Renesas Electronics America, D12363VTE33 Datasheet - Page 245

• Manufacturer Part Number: D12363VTE33
• Description: MCU 3V 0K 120-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12363VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412363VTE33; HD6412363VTE33

Self-Refreshing: A self-refresh mode (battery backup mode) is provided for DRAM as a kind of
standby mode. In this mode, refresh timing and refresh addresses are generated within the DRAM.
To select self-refreshing, set the RFSHE bit and SLFRF bit to 1 in REFCR. When a SLEEP
instruction is executed to enter software standby mode, the CAS and RAS signals are output and
DRAM enters self-refresh mode, as shown in figure 6.38.
When software standby mode is exited, the SLFRF bit is cleared to 0 and self-refresh mode is
exited automatically. If a CBR refresh request occurs when making a transition to software
standby mode, CBR refreshing is executed, and then self-refresh mode is entered.
When using self-refresh mode, the OPE bit must not be cleared to 0 in the SBYCR register.
Figure 6.37 Example of CBR Refresh Timing (CBRM = 1)
A23 to A0
CS
AS
RD
HWR (WE)
RAS
CAS
φ
Normal space access request
Refresh period
Rev.6.00 Mar. 18, 2009 Page 185 of 980
Section 6 Bus Controller (BSC)
REJ09B0050-0600