HD64F3687GH Renesas Electronics America, HD64F3687GH Datasheet - Page 393
HD64F3687GH
Manufacturer Part Number
HD64F3687GH
Description
IC H8 MCU FLASH 56K 64-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet
1.HD64F3684GFPV.pdf
(538 pages)
Specifications of HD64F3687GH
Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
45
Program Memory Size
56KB (56K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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19.5
19.5.1
When V
notices described below to prevent the data to be destroyed.
1. SCL and SDA should be fixed to V
2. V
3. When V
4. V
19.5.2
The endurance is 10
10
device is page-programmed less than 10
19.5.3
This EEPROM has a noise suppression function at SCL and SDA inputs, that cuts noise of width
less than 50 ns. Be careful not to allow noise of width more than 50 ns because the noise of with
more than 50 ms is recognized as an active pulse.
4
cycles/byte in case of byte programming. The data retention time is more than 10 years when a
turned on from the ground level (V
CC
CC
should be turned off after the EEPROM is placed in a standby state.
turn on speed should be longer than 10 us.
CC
Usage Notes
Data Protection at V
Write/Erase Endurance
Noise Suppression Time
is turned on or off, the data might be destroyed by malfunction. Be careful of the
CC
is turned on from the intermediate level, malfunction is caused, so V
5
cycles/page (1% cumulative failure rate) in case of page programming and
CC
On/Off
SS
CC
).
4
or V
cycles.
SS
during V
CC
on/off.
Rev.5.00 Nov. 02, 2005 Page 359 of 500
Section 19 EEPROM
REJ09B0027-0500
CC
should be
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