HD64F3687GH Renesas Electronics America, HD64F3687GH Datasheet - Page 383

IC H8 MCU FLASH 56K 64-QFP

HD64F3687GH

Manufacturer Part Number
HD64F3687GH
Description
IC H8 MCU FLASH 56K 64-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet

Specifications of HD64F3687GH

Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
45
Program Memory Size
56KB (56K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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The H8/3687N has an on-chip 512-byte EEPROM. The block diagram of the EEPROM is shown
in figure 19.1.
19.1
Two writing methods:
1-byte write
Page write: Page size 8 bytes
Three reading methods:
Current address read
Random address read
Sequential read
Acknowledge polling possible
Write cycle time:
10 ms (power supply voltage Vcc = 2.7 V or more)
Write/Erase endurance:
10
Data retention:
10 years after the write cycle of 10
Interface with the CPU
I
Device code 1010
Sleep address code can be changed (initial value: 000)
The I
2
C bus interface (complies with the standard of Philips Corporation)
4
cycles/byte (byte write mode), 10
2
C bus is open to the outside, so the EEPROM can be directly accessed from the outside.
Features
Section 19 EEPROM
4
cycles (page write mode)
5
cycles/page (page write mode)
Rev.5.00 Nov. 02, 2005 Page 349 of 500
Section 19 EEPROM
REJ09B0027-0500

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