MC9S08RG60CFGE Freescale Semiconductor, MC9S08RG60CFGE Datasheet - Page 207
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MC9S08RG60CFGE
Manufacturer Part Number
MC9S08RG60CFGE
Description
IC MCU 60K FLASH 8MHZ 44LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08RE8FJE.pdf
(234 pages)
Specifications of MC9S08RG60CFGE
Core Processor
HCS08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-LQFP
Processor Series
S08RG
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
39
Number Of Timers
2
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08RG60E
Minimum Operating Temperature
- 40 C
Controller Family/series
HCS08
No. Of I/o's
39
Ram Memory Size
60KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
SCI, SPI
Rohs Compliant
Yes
For Use With
DEMO9S08RG60E - BOARD DEMO S08RG/RC/RD/RE FAMILY
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08RG60CFGE
Manufacturer:
Freescale Semiconductor
Quantity:
135
Company:
Part Number:
MC9S08RG60CFGE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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1. If SAFE bit is set, V
A.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device data sheet at room temperature followed by hot temperature, unless specified otherwise in the
device data sheet.
A.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Freescale Semiconductor
Low-voltage detection threshold
Power on reset (POR) voltage
Maximum low-voltage safe state re-arm
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to V
Low-voltage detection threshold
Low-voltage warning threshold
Power on reset (POR) voltage
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
Detect (LVD)
0 < f
MM circuit description
HBM circuit description
Bus
< 8 MHz
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
System.”
Table A-5. DC Characteristics (Temperature Range = –40 to 85°C Ambient)
Table A-4. DC Characteristics (Temperature Range = 0 to 70°C Ambient)
DD
must be above re-arm voltage to allow MCU to accept interrupts, refer to
Parameter
Parameter
Parameter
(V
(V
(V
(V
Table A-3. ESD Protection Characteristics
MC9S08RC/RD/RE/RG Data Sheet, Rev. 1.11
DD
DD
DD
DD
(1)
falling)
rising)
falling)
rising)
DD
Symbol
Symbol
V
Symbol
V
V
V
V
V
V
V
REARM
V
THHBM
V
THMM
RAM
POR
LVW
POR
LVD
LVD
DD
V
POR
1.82
1.90
1.82
1.92
2.07
2.16
0.85
Min
Min
0.8
1.8
(1), (2)
Typical
Typical
Value
1.875
2000
2.24
1.88
1.96
2.13
2.21
200
0.9
1.0
Section 5.6, “Low-Voltage
Electrical Characteristics
Max
1.90
2.60
Max
1.93
2.01
2.18
2.26
1.1
3.6
1.2
—
Unit
Unit
Unit
V
V
V
V
V
V
V
V
V
V
207
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