MC908LJ12CFBE Freescale Semiconductor, MC908LJ12CFBE Datasheet - Page 181
![IC MCU 12K FLASH 8MHZ 52-LQFP](/photos/12/35/123587/mc908lj12cfbe_sml.jpg)
MC908LJ12CFBE
Manufacturer Part Number
MC908LJ12CFBE
Description
IC MCU 12K FLASH 8MHZ 52-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68HC98LJ12CFUE.pdf
(414 pages)
Specifications of MC908LJ12CFBE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
IRSCI, SPI
Peripherals
LCD, LVD, POR, PWM
Number Of I /o
20
Program Memory Size
12KB (12K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
52-LQFP
Processor Series
HC08LJ
Core
HC08
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SCI/SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Operating Supply Voltage
3.3 V, 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68EML08LJLKE, ZK-HC08LX-A, M68CBL05CE
Minimum Operating Temperature
- 40 C
On-chip Adc
6-ch x 10-bit
Controller Family/series
HC08
No. Of I/o's
20
Ram Memory Size
512Byte
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
SCI, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908LJ12CFBE
Manufacturer:
Freescale Semiconductor
Quantity:
135
Company:
Part Number:
MC908LJ12CFBE
Manufacturer:
SANYO
Quantity:
650
Company:
Part Number:
MC908LJ12CFBE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC908LJ12CFBE
Manufacturer:
FREESCALE
Quantity:
20 000
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MC68HC908LJ12
Freescale Semiconductor
—
Rev. 2.1
When the user dedicates a page of FLASH for data storage, and the size
of the data array defined, each call of the EE_WRTIE routine will
automatically transfer the data in the data array (in RAM) to the next
blank block of locations in the FLASH page. Once a page is filled up, the
EE_WRITE routine automatically erases the page, and starts reuse the
page again. In the 128-byte page, an 8-byte control block is used by the
routine to monitor the utilization of the page. In effect, only 120 bytes are
used for data storage. (see
are transparent to the user.
When using this routine to store a 2-byte data array, the FLASH page
can be programmed 60 times before the an erase is required. In effect,
the write/erase endurance is increased by 60 times. When a 15-byte
data array is used, the write/erase endurance is increased by 8 times.
Due to the FLASH page size limitation, the data array is limited from 2
bytes to 15 bytes.
The coding example below uses the $EF00–$EE7F page for data
storage. The data array size is 15 bytes, and the bus speed is
4.9152 MHz. The coding assumes the data block is already loaded in
RAM, with the address pointer, FILE_PTR, pointing to the first byte of the
data block.
PAGE BOUNDARY
PAGE BOUNDARY
Figure 10-10. EE_WRITE FLASH Memory Usage
ONE PAGE = 128 BYTES
Monitor ROM (MON)
Figure
CONTROL: 8 BYTES
F L A S H
DATA ARRAY
DATA ARRAY
DATA ARRAY
10-10). The page control operations
$XX00 OR $XX80
Monitor ROM (MON)
Technical Data
181
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