ST10F273M-4TR3 STMicroelectronics, ST10F273M-4TR3 Datasheet - Page 157

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ST10F273M-4TR3

Manufacturer Part Number
ST10F273M-4TR3
Description
MCU 16BIT 512K FLASH 144-LQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of ST10F273M-4TR3

Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
36K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-MQFP, 144-PQFP
Processor Series
ST10F27x
Core
ST10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

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Part Number
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Quantity
Price
Part Number:
ST10F273M-4TR3
Manufacturer:
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Quantity:
10 000
ST10F273M
24.8.14
24.8.15
Note:
24.8.16
Table 71.
Symbol
t
t
t
t
t
t
t
t
t
t
5
6
7
8
9
10
11
12
13
14
CC ALE high time
CC Address setup to ALE
CC Address hold after ALE
CC
CC
CC
CC
CC
CC
SR
ALE falling edge to RD, WR
(with RW-delay)
ALE falling edge to RD, WR (no
RW-delay)
Address float after RD, WR
(with RW-delay)
Address float after RD, WR (no
RW-delay)1
RD, WR low time
(with RW-delay)
RD, WR low time
(no RW-delay)
RD to valid data in
(with RW-delay)
Memory cycle variables
The tables below use three variables which are derived from the BUSCONx registers and
represent the special characteristics of the programmed memory cycle. The following table
describes how these variables are to be computed.
Table 70.
External memory bus timing
The following sections present the External Memory Bus timings. The given values are
computed for a maximum CPU clock of 40 MHz.
All external memory bus timings and SSC timings reported in the following tables are based
on design characterization and not fully tested in production.
Multiplexed bus
V
ALE cycle time = 6 TCL + 2t
Multiplexed bus timings
ALE Extension
Memory Cycle Time wait states
Memory Tri-stateTime
DD
= 5V ± 10%, V
Parameter
Description
Memory cycle variables
SS
= 0V, T
15.5 + t
-8.5 + t
1.5 + t
28 + t
A
4 + t
4 + t
4 + t
Min
A
+ t
= -40 to +125°C, CL = 50pF,
f
TCL = 12.5ns
CPU
A
A
A
C
C
A
A
C
+ t
= 40 MHz
F
Symbol
(75ns at 40 MHz CPU clock without wait states)
6 + t
t
t
Max
18.5
t
A
C
F
6
C
TCL x [ALECTL]
2TCL x (15 - [MCTC])
2TCL x (1 - [MTTC])
2TCL - 9.5 + t
3TCL - 9.5 + t
TCL - 8.5 + t
TCL - 8.5 + t
TCL - 8.5 + t
TCL - 11 + t
-8.5 + t
Min
1/2 TCL = 1 to 40 MHz
Variable CPU clock
A
A
A
A
A
C
C
Electrical characteristics
Values
2TCL - 19 + t
TCL + 6
Max
6
C
157/182
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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