ATMEGA2561V-8AU Atmel, ATMEGA2561V-8AU Datasheet - Page 341
![IC AVR MCU 256K 8MHZ 64TQFP](/photos/12/13/121332/313-64-tqfp_sml.jpg)
ATMEGA2561V-8AU
Manufacturer Part Number
ATMEGA2561V-8AU
Description
IC AVR MCU 256K 8MHZ 64TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA2561V-8AU
Core Processor
AVR
Core Size
8-Bit
Speed
8MHz
Connectivity
EBI/EMI, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
54
Program Memory Size
256KB (128K x 16)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TQFP, 64-VQFP
Processor Series
ATMEGA256x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
8 KB
Interface Type
2-Wire/SPI/USART
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
54
Number Of Timers
6
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
For Use With
ATSTK600-TQFP64 - STK600 SOCKET/ADAPTER 64-TQFP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG770-1005 - ISP 4PORT FOR ATMEL AVR MCU JTAG770-1004 - ISP 4PORT FOR ATMEL AVR MCU SPIATAVRISP2 - PROGRAMMER AVR IN SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATMEGA2561V-8AU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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- Download datasheet (10Mb)
29.7
29.7.1
29.7.2
29.7.3
29.7.4
2549M–AVR–09/10
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5V - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5V - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after
5. Wait at least 50 µs before sending a new command.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
100 ns.
+12V has been applied to RESET, will cause the device to fail entering programming
mode.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
ATmega640/1280/1281/2560/2561
CC
and GND.
Table 29-7 on page
Table 29-11 on page 340
(1)
memories plus Lock bits. The Lock bits are
338. When programming the Flash,
to “0000” and wait at least
341
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