ATMEGA644P-A15MZ Atmel, ATMEGA644P-A15MZ Datasheet - Page 24
![MCU AVR 64KB FLASH 16MHZ 44QFN](/photos/12/13/121316/313-44-qfn_sml.jpg)
ATMEGA644P-A15MZ
Manufacturer Part Number
ATMEGA644P-A15MZ
Description
MCU AVR 64KB FLASH 16MHZ 44QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA644P-A15MZ
Package / Case
44-VQFN Exposed Pad
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Speed
16MHz
Number Of I /o
32
Eeprom Size
2K x 8
Core Processor
AVR
Program Memory Type
FLASH
Ram Size
4K x 8
Program Memory Size
64KB (64K x 8)
Data Converters
A/D 8x10b
Oscillator Type
Internal
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Connectivity
I²C, SPI, UART/USART
Core Size
8-Bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Quantity
Price
Company:
Part Number:
ATMEGA644P-A15MZ
Manufacturer:
ATMEL
Quantity:
3 500
Part Number:
ATMEGA644P-A15MZ
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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ATmega164P/324P/644P
While EEPE is set, any write to EEPMn will be ignored. During reset, the EEPMn bits will be
reset to 0b00 unless the EEPROM is busy programming.
Table 6-1.
• Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing EERIE to one enables the EEPROM Ready Interrupt if the I bit in SREG is set. Writing
EERIE to zero disables the interrupt. The EEPROM Ready interrupt generates a constant inter-
rupt when EEPE is cleared.
• Bit 2 – EEMPE: EEPROM Master Programming Enable
The EEMPE bit determines whether setting EEPE to one causes the EEPROM to be written.
When EEMPE is set, setting EEPE within four clock cycles will write data to the EEPROM at the
selected address If EEMPE is zero, setting EEPE will have no effect. When EEMPE has been
written to one by software, hardware clears the bit to zero after four clock cycles. See the
description of the EEPE bit for an EEPROM write procedure.
• Bit 1 – EEPE: EEPROM Programming Enable
The EEPROM Write Enable Signal EEPE is the write strobe to the EEPROM. When address
and data are correctly set up, the EEPE bit must be written to one to write the value into the
EEPROM. The EEMPE bit must be written to one before a logical one is written to EEPE, other-
wise no EEPROM write takes place. The following procedure should be followed when writing
the EEPROM (the order of steps 3 and 4 is not essential):
1. Wait until EEPE becomes zero.
2. Wait until SELFPRGEN in SPMCSR becomes zero.
3. Write new EEPROM address to EEAR (optional).
4. Write new EEPROM data to EEDR (optional).
5. Write a logical one to the EEMPE bit while writing a zero to EEPE in EECR.
6. Within four clock cycles after setting EEMPE, write a logical one to EEPE.
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write.
Step 2 is only relevant if the software contains a Boot Loader allowing the CPU to program the
Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See
gramming” on page 296
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
EEPM1
0
0
1
1
EEPM0
EEPROM Mode Bits
0
1
0
1
Programming
for details about Boot programming.
3.4 ms
1.8 ms
1.8 ms
Time
–
Operation
Erase and Write in one operation (Atomic Operation)
Erase Only
Write Only
Reserved for future use
“Memory Pro-
7674F–AVR–09/09
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