ATMEGA644V-10MU Atmel, ATMEGA644V-10MU Datasheet - Page 22

• Manufacturer Part Number: ATMEGA644V-10MU
• Description: IC AVR MCU FLASH 64K 44-QFN
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA644V-10MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 32
• Program Memory Size: 64KB (32K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 2K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-VQFN Exposed Pad
• Package: 44QFN EP
• Device Core: AVR
• Family Name: ATmega
• Maximum Speed: 10 MHz
• Operating Supply Voltage: 2.5|3.3|5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 32
• Interface Type: JTAG/SPI/TWI/USART
• On-chip Adc: 8-chx10-bit
• Number Of Timers: 3
• Processor Series: ATMEGA64x
• Core: AVR8
• Data Ram Size: 4 KB
• Maximum Clock Frequency: 20 MHz
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• For Use With: ATSTK600-TQFP44 - STK600 SOCKET/ADAPTER 44-TQFPATSTK600 - DEV KIT FOR AVR/AVR32770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRISP2 - PROGRAMMER AVR IN SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

22
ATmega644
Table 6-1.
• Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing EERIE to one enables the EEPROM Ready Interrupt if the I-bit in SREG is set. Writing
EERIE to zero disables the interrupt. The EEPROM Ready interrupt generates a constant inter-
rupt when EEPE is cleared.
• Bit 2 – EEMPE: EEPROM Master Programming Enable
The EEMPE bit determines whether setting EEPE to one causes the EEPROM to be written.
When EEMPE is set, setting EEPE within four clock cycles will write data to the EEPROM at the
selected address If EEMPE is zero, setting EEPE will have no effect. When EEMPE has been
written to one by software, hardware clears the bit to zero after four clock cycles. See the
description of the EEPE bit for an EEPROM write procedure.
• Bit 1 – EEPE: EEPROM Programming Enable
The EEPROM Write Enable Signal EEPE is the write strobe to the EEPROM. When address
and data are correctly set up, the EEPE bit must be written to one to write the value into the
EEPROM. The EEMPE bit must be written to one before a logical one is written to EEPE, other-
wise no EEPROM write takes place. The following procedure should be followed when writing
the EEPROM (the order of steps 3 and 4 is not essential):
1. Wait until EEPE becomes zero.
2. Wait until SELFPRGEN in SPMCSR becomes zero.
3. Write new EEPROM address to EEAR (optional).
4. Write new EEPROM data to EEDR (optional).
5. Write a logical one to the EEMPE bit while writing a zero to EEPE in EECR.
6. Within four clock cycles after setting EEMPE, write a logical one to EEPE.
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write.
Step 2 is only relevant if the software contains a Boot Loader allowing the CPU to program the
Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See
gramming” on page 284
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
When the write access time has elapsed, the EEPE bit is cleared by hardware. The user soft-
ware can poll this bit and wait for a zero before writing the next byte. When EEPE has been set,
the CPU is halted for two cycles before the next instruction is executed.
EEPM1
0
0
1
1
EEPM0
EEPROM Mode Bits
0
1
0
1
Programming
for details about Boot programming.
3.4 ms
1.8 ms
1.8 ms
Time
–
Operation
Erase and Write in one operation (Atomic Operation)
Erase Only
Write Only
Reserved for future use
”Memory Pro-
2593N–AVR–07/10