ATMEGA16HVA-4CKU Atmel, ATMEGA16HVA-4CKU Datasheet - Page 170
![MCU AVR 16K FLASH 4MHZ 36-LGA](/photos/12/32/123221/36ck1-lga_sml.jpg)
ATMEGA16HVA-4CKU
Manufacturer Part Number
ATMEGA16HVA-4CKU
Description
MCU AVR 16K FLASH 4MHZ 36-LGA
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheet
1.ATMEGA16HVA-4CKU.pdf
(196 pages)
Specifications of ATMEGA16HVA-4CKU
Core Processor
AVR
Core Size
8-Bit
Speed
4MHz
Connectivity
SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
7
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 9 V
Data Converters
A/D 5x12b
Oscillator Type
External
Operating Temperature
-20°C ~ 85°C
Package / Case
36-LGA
Processor Series
ATMEGA16x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SPI
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRSB200, ATAVRSB201
Minimum Operating Temperature
- 20 C
On-chip Adc
12 bit, 5 Channel
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK500 - PROGRAMMER AVR STARTER KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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29.5
Table 29-5.
Notes:
29.6
Table 29-6.
Note:
170
Parameter
VFET DC level
VFET ripple
OC, OD clamping
voltage
OC, OD
OC, OD
Risetime
(OC, OD, 0 - 90 %)
Falltime
(OC, OD, 100 - 10 %)
Symbol
V
V
V
V
t
RST
HYST
BLOT
POT
BOT
FET Driver Characteristics
1. All DC Characteristics contained in this data sheet are based on simulation and characterization of other AVR microcontrol-
2. These numbers assume the use of one external N-channel FET of model TPCS8210. If other FETs are used, the numbers
3. Not tested in production.
Power-on and Reset Characteristics
1. The voltage at the Pack + terminal will be slightly higher than V
(2)(3)
(2)(3)
ATmega8HVA/16HVA
lers manufactured in the same process technology. These values are preliminary values representing design targets, and
will be updated after characterization of actual silicon.
may deviate somewhat. The equivalent capacitive loads at OC and OD are around 1.2 nF. Rise and fall times scale approxi-
mately proportional to the capacitive loading
Pull-down current on the BATT pin in the range 50 - 110 uA and the R
and the BATT pin. R
(2)
Parameter
Power-on Threshold Voltage
Minimum pulse width on RESET Pin
Brown-Out Detection (BOD) Trigger
Level
BOD Level Hysteresis
Power-off Threshold Voltage
FET Driver Outputs specification
Reset Characteristics(T
(2)
Condition
1 cell DUVR operation,
VREF = 1.100V
2 cell DUVR operation,
VREF = 1.100V
1 cell DUVR operation
2 cell DUVR operation
Normal ON operation
Normal OFF operation
Normal ON operation
Normal OFF operation
BATT
= 1k gives a voltage drop 0.05 - 0.11V.
A
(1)
= -10°C to 70°C unless otherwise specified)
(1)
(T
A
= -10°C to 70°C unless otherwise specified)
VFET = 8.4V
VFET = 4.2V
VFET + 2.5
Condition
Min.
1.9
3.8
POT
when the chip is enabled. This is because of an internal
BATT
VFET + 4
Typ.
±0.1
±0.1
14.0
2.75
2.75
Min
2.0
4.0
0.0
resistor connected between the Pack + terminal
1
5
VFET + 6.5
3.65
Typ
900
100
3.5
2.9
2.4
Max.
2.1
4.2
0.1
10
2
Max
3.95
4.1
8024A–AVR–04/08
Units
ms
µs
V
V
V
V
V
V
V
Units
mV
ns
V
V
V
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