ATMEGA16A-AUR Atmel, ATMEGA16A-AUR Datasheet - Page 270

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ATMEGA16A-AUR

Manufacturer Part Number
ATMEGA16A-AUR
Description
MCU AVR 16KB FLASH 16MHZ 44TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheet

Specifications of ATMEGA16A-AUR

Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
Part Number:
ATMEGA16A-AUR
Manufacturer:
Atmel
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10 000
Part Number:
ATMEGA16A-AUR
Manufacturer:
MICROCHIP/微芯
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26.7.4
270
ATmega16A
Programming the Flash
changed. A Chip Erase must be performed before the Flash and/or the EEPROM are
reprogrammed.
Note:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
B. Load Address Low byte
C. Load Data Low Byte
D. Load Data High Byte
E. Latch Data
F. Repeat B through E until the entire buffer is filled or until all data within the page is loaded.
While the lower bits in the address are mapped to words within the page, the higher bits address
the pages within the FLASH. This is illustrated in
1. Load Command “Chip Erase”
2. Set XA1, XA0 to “10”. This enables command loading.
3. Set BS1 to “0”.
4. Set DATA to “1000 0000”. This is the command for Chip Erase.
5. Give XTAL1 a positive pulse. This loads the command.
6. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
7. Wait until RDY/BSY goes high before loading a new command.
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address Low byte ($00 - $FF).
4. Give XTAL1 a positive pulse. This loads the address Low byte.
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data Low byte ($00 - $FF).
3. Give XTAL1 a positive pulse. This loads the data byte.
1. Set BS1 to “1”. This selects high data byte.
2. Set XA1, XA0 to “01”. This enables data loading.
3. Set DATA = Data High byte ($00 - $FF).
4. Give XTAL1 a positive pulse. This loads the data byte.
1. Set BS1 to “1”. This selects high data byte.
2. Give PAGEL a positive pulse. This latches the data bytes. (See
waveforms)
1. The EEPRPOM memory is preserved during chip erase if the EESAVE Fuse is programmed.
Table 26-5 on page
Figure 26-2 on page
267. When programming the Flash,
Figure 26-3
271. Note that if less than
for signal
8154B–AVR–07/09

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