ATTINY2313A-MUR Atmel, ATTINY2313A-MUR Datasheet - Page 193

• Manufacturer Part Number: ATTINY2313A-MUR
• Description: MCU AVR 2K FLASH 20MHZ 20QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY2313A-MUR

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -

20.8.2
Table 20-15. Serial Programming Instruction Set
8246A–AVR–11/09
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory Page
Write Program Memory Page
Read EEPROM Memory
Write EEPROM Memory
Load EEPROM Memory
Page (page access)
Write EEPROM Memory
Page (page access)
Read Lock bits
Write Lock bits
Read Signature Byte
Write Fuse bits
Write Fuse High bits
Write Extended Fuse Bits
Read Fuse bits
Read Fuse High bits
Serial Programming Instruction Set
1010 1100
1010 1100
0010 H000
0100 H000
0100 1100
1010 0000
1100 0000
1100 0001
1100 0010
0101 1000
1010 1100
0011 0000
1010 1100
1010 1100
1010 1100
0101 0000
0101 1000
Byte 1
0101 0011
100x xxxx
0000 00aa
000x xxxx
0000 00aa
000x xxxx
000x xxxx
0000 0000
00xx xxxx
0000 0000
111x xxxx
000x xxxx
1010 0000
1010 1000
1010 0100
0000 0000
0000 1000
Byte 2
Instruction Format
xxxx xxxx
xxxx xxxx
bbbb bbbb
xxxx bbbb
bbbb xxxx
xbbb bbbb
xbbb bbbb
0000 00bb
xbbb bb00
xxxx xxxx
xxxx xxxx
xxxx xxbb
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
xxxx xxxx
oooo oooo
iiii iiii
iiii iiii
xxxx xxxx
xxoo oooo
11ii iiii
oooo oooo
iiii iiii
iiii iiii
xxxx xxxi
oooo oooo
oooo oooo
Byte4
Operation
Enable Serial Programming after
RESET goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from
Program memory at word address a:b.
Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program Memory Page at
address a:b.
Read data o from EEPROM memory at
address b.
Write data i to EEPROM memory at
address b.
Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
Write EEPROM page at address b.
Read Lock bits. “0” = programmed, “1”
= unprogrammed. See
page 178
Write Lock bits. Set bits = “0” to
program Lock bits. See
page 178
Read Signature Byte o at address b.
Set bits = “0” to program, “1” to
unprogram.
Set bits = “0” to program, “1” to
unprogram.
Set bits = “0” to program, “1” to
unprogram.
Read Fuse bits. “0” = programmed, “1”
= unprogrammed.
Read Fuse High bits. “0” = pro-
grammed, “1” = unprogrammed.
for details.
for details.
Table 20-1 on
Table 20-1 on
193