AT91SAM9XE512-QU Atmel, AT91SAM9XE512-QU Datasheet - Page 248

MCU ARM9 512K FLASH 208-PQFP

AT91SAM9XE512-QU

Manufacturer Part Number
AT91SAM9XE512-QU
Description
MCU ARM9 512K FLASH 208-PQFP
Manufacturer
Atmel
Series
AT91SAMr
Datasheet

Specifications of AT91SAM9XE512-QU

Core Processor
ARM9
Core Size
16/32-Bit
Speed
180MHz
Connectivity
EBI/EMI, Ethernet, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
208-MQFP, 208-PQFP
Controller Family/series
AT91SAM9xxxxx
No. Of I/o's
96
Ram Memory Size
32KB
Cpu Speed
180MHz
No. Of Timers
2
Rohs Compliant
Yes
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
2-Wire, EBI, I2S, SPI, USART
Maximum Clock Frequency
180 MHz
Number Of Programmable I/os
96
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Package
208PQFP
Device Core
ARM926EJ-S
Family Name
91S
Maximum Speed
180 MHz
Operating Supply Voltage
1.8|2.5|3.3 V
For Use With
AT91SAM9XE-EK - KIT EVAL FOR AT91SAM9XEAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

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24.5.5.1
Figure 24-6. Self-refresh Mode Behavior
6254C–ATARM–22-Jan-10
SDRAMC_A[12:0]
SDRAMC_SRR
SDCKE
SDWE
SDCK
SDCS
Write
RAS
CAS
Self-refresh Mode
SRCB = 1
This mode is selected by programming the LPCB field to 1 in the SDRAMC Low Power Register.
In self-refresh mode, the SDRAM device retains data without external clocking and provides its
own internal clocking, thus performing its own auto-refresh cycles. All the inputs to the SDRAM
device become “don’t care” except SDCKE, which remains low. As soon as the SDRAM device
is selected, the SDRAM Controller provides a sequence of commands and exits self-refresh
mode.
Some low-power SDRAMs (e.g., mobile SDRAM) can refresh only one quarter or a half quarter
or all banks of the SDRAM array. This feature reduces the self-refresh current. To configure this
feature, Temperature Compensated Self Refresh (TCSR), Partial Array Self Refresh (PASR)
and Drive Strength (DS) parameters must be set in the Low Power Register and transmitted to
the low-power SDRAM during initialization.
The SDRAM device must remain in self-refresh mode for a minimum period of t
remain in self-refresh mode for an indefinite period. This is described in
AT91SAM9XE128/256/512 Preliminary
Self Refresh Mode
to the SDRAM Controller
Access Request
T
Figure
XSR
= 3
24-6.
RAS
Row
and may
248

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