ATTINY24-20MU Atmel, ATTINY24-20MU Datasheet - Page 170
![IC MCU AVR 2K FLASH 20MHZ 20-QFN](/photos/6/87/68751/313-20-qfn_sml.jpg)
ATTINY24-20MU
Manufacturer Part Number
ATTINY24-20MU
Description
IC MCU AVR 2K FLASH 20MHZ 20-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY24-20MU
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
12
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-MLF®, QFN
Processor Series
ATTINY2x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
USI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
12
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
For Use With
ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRISP2 - PROGRAMMER AVR IN SYSTEMATSTK505 - ADAPTER KIT FOR 14PIN AVR MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATTINY24-20MU
Manufacturer:
AVNET
Quantity:
20 000
- Current page: 170 of 238
- Download datasheet (5Mb)
19.7.5
170
ATtiny24/44/84
Programming the EEPROM
Figure 19-4. Addressing the Flash which is Organized in Pages
Figure 19-5. High-voltage Serial Programming Waveforms
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
SDO
PB0
PB1
PB2
PB3
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
SDI
SCI
SII
ming” cycle to finish.
programmed.
PROGRAM MEMORY
PROGRAM
COUNTER
PAGE
0
MSB
Table 19-16 on page
PAGE ADDRESS
WITHIN THE FLASH
MSB
MSB
1
PCMSB
2
PCPAGE
3
171):
4
PAGEMSB
PCWORD
Table 20-12 on page
5
WORD ADDRESS
WITHIN A PAGE
6
INSTRUCTION WORD
7
PAGE
LSB
LSB
LSB
8
183. When programming the
9
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
10
8006K–AVR–10/10
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