PIC12F675-I/SN Microchip Technology, PIC12F675-I/SN Datasheet - Page 94

• Manufacturer Part Number: PIC12F675-I/SN
• Description: IC MCU CMOS FLSH-BASE 8BIT 8SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 12Fr

Specifications of PIC12F675-I/SN

• Program Memory Type: FLASH
• Program Memory Size: 1.75KB (1K x 14)
• Package / Case: 8-SOIC (3.9mm Width)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: POR, WDT
• Number Of I /o: 5
• Eeprom Size: 128 x 8
• Ram Size: 64 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC12F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 64 B
• Interface Type: RS- 232/USB
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 2
• Operating Supply Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 53270-913
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014, DM164120-4
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 4-ch x 10-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC12F629/675
12.7
DS41190G-page 94
DC CHARACTERISTICS
D100
D101
D120
D120A
D121
D122
D123
D124
D130
D130A
D131
D132
D133
D134
Param
Note 1: See Section 8.5.1 “Using the Data EEPROM” for additional information.
No.
*
† Data in “Typ” column is at 5.0V, 25C unless otherwise stated. These parameters are for design guidance
DC Characteristics: PIC12F629/675-I (Industrial), PIC12F629/675-E (Extended) (Cont.)
These parameters are characterized but not tested.
only and are not tested.
C
C
E
E
V
T
T
T
E
E
V
V
T
T
Sym
DEW
RETD
REF
PEW
RETD
D
D
DRW
P
D
PR
PEW
OSC2
IO
Capacitive Loading Specs
on Output Pins
OSC2 pin
All I/O pins
Data EEPROM Memory
Byte Endurance
Byte Endurance
V
Erase/Write cycle time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
Cell Endurance
V
V
Erase/Write cycle time
Characteristic Retention
DD
DD
DD
for Read/Write
for Read
for Erase/Write
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
100K
V
V
Min
10K
10K
1M
4.5
1K
40
40
—
—
—
—
MIN
MIN
Typ†
100K
100K
10M
10K
1M
—
—
—
—
—
—
—
5
2
Max
15*
50*
5.5
5.5
5.5
2.5
—
—
—
—
—
—
—
6
-40°C  T
Units
Year Provided no other specifications
Year Provided no other specifications
E/W -40C  T
E/W +85°C  T
E/W -40C  T
E/W -40C  T
E/W +85°C  T
ms
ms
pF
pF
V
V
V
A
A
In XT, HS and LP modes when
external clock is used to drive
OSC1
Using EECON to read/write
V
voltage
are violated
V
voltage
are violated
 +85°C for industrial
 +125°C for extended
 2010 Microchip Technology Inc.
MIN
MIN
= Minimum operating
= Minimum operating
A
A
A
Conditions
A
A
+85°C
+85°C
+85°C
+125°C
+125°C