MT8VDDT6464HDG-335F2 Micron Technology Inc, MT8VDDT6464HDG-335F2 Datasheet - Page 25

• Manufacturer Part Number: MT8VDDT6464HDG-335F2
• Description: MODULE DDR 512MB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464HDG-335F2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 800mA
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 20: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
pdf: 09005aef80b575ca, source: 09005aef806e1d28
DDA8C32_64x64HDG.fm - Rev. D 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on
Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
3)
SDRAM Access from Clock,
Latency = 3)
Module Configuration Type
Refresh Rate/type
SDRAM Device Width (Primary DDR
SDRAM)
Error-checking DDR SDRAM Data Width
Minimum Clock Delay, Back-to-Back
Random Column Access
Burst Lengths Supported
Number of Banks on DDR SDRAM
Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
2.5)
SDRAM Access From Clock,
Latency = 2.5)
SDRAM Cycle Time,
2)
SDRAM Access From CK,
Latency = 2)
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
t
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
RRD
DESCRIPTION
t
t
t
CK (CAS Latency =
CK (CAS Latency =
CK (CAS Latency =
t
AC (CAS
t
t
AC (CAS
AC (CAS
t
RAS
t
RCD
t
RP
Unbuffered/Diff. Clock
0.75ns (Set for PC2100/
Fast/Concurrent Auto
PC1600 Compatibility)
7.5ns (Set for PC2100/
PC1600 Compatibility)
0.7ns (Set for PC2700
ENTRY (VERSION)
6ns (Set for PC2700
128MB, 256MB
Compatibility)
Compatibility)
3, 2.5, and 2
DDR SDRAM
0.7ns (-40B)
15ns (-40B)
10ns (-40B)
40ns (-40B)
7.8µs/SELF
Precharge
5ns (-40B)
15ns (-40B)
SSTL 2.5V
9 or 10
1 clock
2, 4, 8
None
None
25
128
256
13
64
16
2
0
4
0
1
256MB, 512MB (x64, DR) PC3200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT8VDDT3264HD
200-PIN DDR SODIMM
0D
1C
C1
3C
3C
80
08
07
09
02
40
00
04
50
70
00
82
10
00
01
0E
04
01
02
20
60
70
75
75
28
28
20
MT8VDDT6464HD
©2004 Micron Technology, Inc.
0D
0A
80
08
07
02
40
00
04
50
70
00
82
10
00
01
0E
04
1C
01
02
20
C1
60
70
75
75
3C
28
3C
28
40