MT18VDDF12872HY-40BF1 Micron Technology Inc, MT18VDDF12872HY-40BF1 Datasheet - Page 24

• Manufacturer Part Number: MT18VDDF12872HY-40BF1
• Description: MODULE DDR 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HY-40BF1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 19: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
pdf: 09005aef80e4880c, source: 09005aef80e487d7
DDAF18C128x72HG.fm - Rev. A 10/04 EN
BYTE
36-40
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
0
1
2
3
4
5
6
7
8
9
Number of Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Rows Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data With
Module Data With (Continued)
Moduel Voltage Interface Levels
SDRAM Cycle Time, (
SDRAM Access From Clock,(
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random Column
Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
SDRAM Access from CK,
SDRAM Cycle Time,
SDRAM Access From CK,
Minimum Row Precharge Time,
Minimum Row to Row Active,
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
Address and Command Setup Time,
Address and Command Hold Time,
Data/ Data Mask Input Setup Time,
Data/ Data Mask Input Hold Time,
Reserved
t
t
t
CK, CAS Latency = 2.5
CK, CAS Latency = 2
CK), CAS Latency = 3
DESCRIPTION
t
t
AC, CAS Latency = 2.5
AC, CAS Latency = 2
t
AC), CAS Latency = 3
t
RAS
t
RRD
t
RCD
t
RP
t
t
DH
t
IH
t
DS
IS
24
0.75ns (for PC 2100 and PC
1600 system compatibility)
1600 system compatibility)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.7ns (for PC 2700 system
7.5ns (for PC 2100 and PC
6ns (for PC2700 system
Unbuffered/Diff. Clock
ENTRY (VERSION)
Fast/Concurrent AP
1GB (x72, ECC, DR) PC3200
compatibility)
compatibility)
SDRAM DDR
0.7ns (-40B)
0.6ns (-40B)
0.6ns (-40B)
0.4ns (-40B)
0.4ns (-40B)
15ns (-40B)
10ns (-40B)
15ns (-40B)
40ns (-40B)
7.8µs/SELF
5ns (-40B)
SSTL 2.5V
3, 2.5, 2
512MB
1 clock
2, 4, 8
128
256
ECC
11
72
13
200-PIN DDR SODIMM
2
0
8
8
4
0
1
MT18VDDF12872H
©2004 Micron Technology, Inc.
0D
80
08
07
0B
02
48
00
04
50
70
02
82
08
08
01
0E
04
1C
01
02
20
C0
60
70
75
75
3C
28
3C
28
80
60
60
40
40
00