MT45W4MW16BCGB-701 IT Micron Technology Inc, MT45W4MW16BCGB-701 IT Datasheet - Page 56

• Manufacturer Part Number: MT45W4MW16BCGB-701 IT
• Description: IC PSRAM 64MB 54-VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 IT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q3816748

Figure 43:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
Burst WRITE Operation – Variable Latency Mode
t AS
t AS
Notes:
WRITE burst identified
3
3
Valid address
(WE# = LOW)
t SP
t CSP
t SP
t SP
High-Z
t CEW
1. Nondefault BCR settings for burst WRITE operation in variable latency mode: latency code 2
2. WAIT asserts for LC cycles for both fixed and variable latency.
3.
t HD
t HD
t HD
(3 clocks); WAIT active LOW; WAIT asserted during delay; burst length 4; burst wrap
enabled.
LC = latency code (BCR[13:11]).
t
AS required if
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Note 2
t
CSP > 20ns.
t CLK
t KHTL
t SP
56
t SP t HD
t CEM
D0
t HD
t KP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D1
t KP
D2
t KHKL
©2005 Micron Technology, Inc. All rights reserved.
D3
Timing Diagrams
t HD
t HZ
t CBPH
Don’t Care
High-Z