CYD09S18V18-167BBXI Cypress Semiconductor Corp, CYD09S18V18-167BBXI Datasheet - Page 51

• Manufacturer Part Number: CYD09S18V18-167BBXI
• Description: IC SRAM 9MBIT 167MHZ 256LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYD09S18V18-167BBXI

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 256-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document History Page
Document Number: 38-06082 Rev. *J
Document Title: FullFlex™ Synchronous SDR Dual Port SRAM
Document Number: 38-06082
REV.
*H
*J
*I
ECN NO. Submission
2505003
2898491
2995098
07/01/2010
07/28/2010
See ECN
Date
Orig. of
Change
RAME
RAME
AESA
VKN/
Modified footnote #1
Removed 250 MHz speed bin
Added 2-Mbit part and it’s related information
Changed ball name ZQ1 to DNU for 18M and lesser density devices
Added 256-Ball (17 x 17 mm) BGA package for 18M
Made PORTSTD[1:0] left and right pins driven only by LVTTL reference level
For 1.8V LVCMOS level, Changed V
Changed V
Changed tHD, tHAC specs for 36M from 0.6 ns/0.7 ns to 0.8 ns (See footnote# 32)
Updated Ordering Information table
Modified “Counter Load Operation” section on page 12 and in Table7. on page 13.
Corrected typo in Table 14. by making LowSPD = 0 for t
Modified figure 16. on page 30.
Removed inactive parts from Ordering Information.
Updated Packaging Information.
Corrected “ Counter Interrupt operation” Section in Page 14 of the datasheet
Updated ordering information with the parts, CYD02S36V18-200BBC and
CYD36S72V18-167BGI.
Updated
Added
Minor edits.
Acronyms
Ordering Information
IL(max)
and
from 0.36V to 0.35 times V
Units of
Description of Change
and added
Measure.
IH(min)
Ordering Code
from 1.26V to 0.65 times V
DDIO
CD1
spec in the description.
Definitions.
Page 51 of 52
FullFlex
DDIO
and
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