CYD09S18V18-167BBXI Cypress Semiconductor Corp, CYD09S18V18-167BBXI Datasheet - Page 19

• Manufacturer Part Number: CYD09S18V18-167BBXI
• Description: IC SRAM 9MBIT 167MHZ 256LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYD09S18V18-167BBXI

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 256-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage temperature............................... –65 °C to + 150 °C
Ambient temperature with
power applied .......................................... –55 °C to + 125 °C
Supply voltage to ground potential ..............–0.5 V to + 4.1 V
DC voltage applied to
outputs in high Z State ...................... –0.5 V to V
DC input voltage ............................... –0.5 V to V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage........................................... > 2200 V
(JEDEC JESD8-6, JESD8-B)
Latch-up current ..................................................... > 200 mA
Electrical Characteristics
Over the Operating Range
Document Number: 38-06082 Rev. *J
V
V
V
V
Notes
Parameter
39. These parameters are met with VIM disabled.
40. The DC specifications are measured under steady state conditions. The AC specifications are measured while switching at speed. AC VIH/VIL in HSTL mode are
OH
OL
IH
IL
measured with 1 V/ns input edge rates
Output HIGH voltage
(V
(V
(V
(V
(V
Output HIGH voltage
(V
(V
(V
(V
(V
Input HIGH voltage
Input LOW voltage
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
Description
OH
OH
OH
OH
OH
OL
OL
OL
OL
OL
= 8 mA)
= 4 mA)
= 4 mA)
= 6 mA)
= 4 mA)
= –8 mA)
= –4 mA)
= –4 mA)
= –4 mA)
= –6 mA)
DDIO
DDIO
2.5 V LVCMOS
1.8 V LVCMOS
2.5 V LVCMOS
1.8 V LVCMOS
2.5 V LVCMOS
1.8 V LVCMOS
2.5 V LVCMOS
1.8 V LVCMOS
Configuration
HSTL (DC)
HSTL (AC)
HSTL (AC)
HSTL(DC)
HSTL(DC)
HSTL(DC)
+ 0.5 V
+ 0.5 V
LVTTL
LVTTL
LVTTL
LVTTL
[40]
[40]
[40]
[40]
[40]
[40]
Operating Range
Power Supply Requirements
LVTTL VDDIO
2.5 V LVCMOS VDDIO
HSTL VDDIO
1.8 V LVCMOS VDDIO
3.3 V VTTL
2.5 V VTTL
HSTL VREF
Commercial
Industrial
Range
VDDIO – 0.45
VDDIO – 0.4
VDDIO – 0.5
0.65 × VDDIO
VREF + 0.1
2.4
1.7
–0.3
–0.3
Min
1.7
–
–
–
–
–
2
–
–
[39]
[39]
[39]
[39]
[39]
–40 °C to +85 °C
All Speed Bins
0 °C to +70 °C
Temperature
Ambient
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.68 V
3.0 V
2.3 V
1.4 V
1.7 V
3.0 V
2.3 V
Min
0.35 × VDDIO
VDDIO + 0.3
VDDIO + 0.3
VREF – 0.1
1.8 V  100 mV
1.8 V  100 mV
1.5 V 80 mV
1.5 V 80 mV
0.45
0.75 V
0.4
0.4
0.5
0.7
3.3 V
2.5 V
1.5 V
1.8 V
3.3 V
2.5 V
Max
Typ
0.8
0.7
VCORE
–
–
–
–
–
Page 19 of 52
[39]
[39]
[39]
[39]
FullFlex
[39]
0.95 V
3.6 V
2.7 V
1.9 V
1.9 V
3.6 V
2.7 V
Max
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
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